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微波化学气相沉积制备AlO_x薄膜及钝化晶硅性能的研究

THE PASSIVATION PROPERTY OF AlO_x THIN FILM DEPOSITED BY LMW-PECVD
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摘要 通过线性微波化学气相沉积（LMW-PECVD）技术在P型单晶样品上高生长速度下制备了高质量的AlOx薄膜,采用场发射电子扫描显微镜、光学椭圆偏振仪器、有效少子寿命测量仪对实验样品进行了表征和分析.结果表明,AlOx薄膜的厚度和折射率都对晶硅的钝化效果有影响,薄膜厚度在20～30 nm之间、折射率在1.6～1.65 之间出现了理想的钝化效果;热处理对AlOx薄膜钝化效果的影响较为复杂,理想的热处理温度在350～400 ℃之间. AlOx thin film have been synthesized on p-Si substrates via linear micro wave plasma enhanced chemical vapor deposited system. The obtained samples were characterized by SEM、Elliptical polarization instrument and Lifetime measuring device. The experimental results show that thickness and refractivity of AlOx thin film has influenced on passiv-ation property in p-Si. The thickness from 20 nm to 25 nm and refractivity from 1.6 to1.65 of AlOx thin film has perfect passivation property. The impact of Annealing on AlOx thin film was complex,but the best annealing temperature has aris-ed from 350℃to 400℃.
作者 张健 巴德纯 张振厚
机构地区 东北大学机械及自动化学院 中国科学院沈阳科学仪器股份有限公司
出处 《真空与低温》 2015年第6期315-319,共5页 Vacuum and Cryogenics
基金 教育部博士点基金(20120042110031)
关键词 线性微波源 氧化铝薄膜 少子寿命 line microwave sources AlOx lifetime
分类号 O647 [理学—物理化学]
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参考文献20

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