摘要
为准确得到绝缘栅双极型晶体管(IGBT)在混合型直流断路器下的性能参数,测试平台的设计非常重要。结合断路器的特殊工况,对测试平台关键部件模型进行分析,并考虑寄生参数建立测试平台精细化电路模型。仿真分析了测试平台寄生参数对被测IGBT测试电气应力的影响。结果表明,寄生电阻对测试应力影响很小,而缓冲电容换流回路寄生电感对IGBT关断能量影响显著,金属氧化物可变电阻器(MOV)放电回路寄生电感对IGBT的过电压影响显著,且各支路寄生电感对IGBT过电压的影响存在耦合性。建立的平台模型和寄生参数分析可以有效指导断路器用功率器件测试平台设计。
In order to accurately obtain the performance parameters of the insulated gate bipolar transistor(IGBT)under the hybrid DC circuit breaker, the design of the test platform is very important. Combined with the special working conditions of the circuit breaker, the key component model of the test platform was analyzed, and the parasitic parameters were considered to establish a refined circuit model for the test platform. The influence of the parasitic parameters of the test platform on the electrical stress of the tested IGBT was simulated and analyzed. The results show that the parasitic resistance has little effect on the test stress, and the parasitic inductance of the snubber capacitor commutation loop significantly affects the IGBT turn-off energy, the parasitic inductance of the metal oxide varistor(MOV)discharge loop significantly affects the IGBT overvoltage, and the influence of the parasitic inductance of each branch on the IGBT overvoltage is coupled. The platform model and parasitic parameter impact analysis can effectively guide the design of power device test platform for circuit breakers.
作者
邓二平
张传云
应晓亮
赵志斌
黄永章
Deng Erping;Zhang Chuanyun;Ying Xiaoliang;Zhao Zhibin;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102206,China)
出处
《半导体技术》
CAS
北大核心
2019年第2期154-160,共7页
Semiconductor Technology
基金
新能源电力系统国家重点实验室开放课题资助项目(LAPS17003)
