摘要
以氯化亚锡、硫代乙酰胺、三氯化锑为反应物,采用化学浴沉积法在玻璃衬底上沉积不同锑掺杂量(摩尔分数)硫化锡(Sn S:Sb)膜,研究了锑掺杂量对薄膜晶相结构、表面形貌和光电性能的影响。结果表明:锑掺杂Sn S薄膜是具有正交结构多晶薄膜,薄膜为纳米片组装成的花状球形颗粒。随着Sb掺杂量由1.8%增加到7.2%,其相应的禁带宽度从0.93 e V增加到1.30 e V。随着Sb掺杂量的增加,Sn S薄膜的电阻率呈现先下降后增大趋势,当Sb掺杂量为3.6%时,其最小值为5.21×103?·cm。
Sb-doped tin sulphide （SnS：Sb） thin films with different antimony contents （in mole fraction） were grown on a glass substrate via chemical bath deposition. The precursor solution was prepared from tin （II） chloride, thioacetamide and antimony trichloride. The influence of the content of Sb-doped on the crystal structure, morphology and photoelectric property was investigated. The results indicate that the films are polycrystalline SnS：Sb with the orthorhombic structure. The nanoflakes assembled flower-like spherical grains occur on the surface. The optical energy band gap value range from 0.93 to 1.3 eV were determined based on the transmittance spectra. The resistivity of SnS：Sb film firstly decreases and then increases with increasing the content of Sb/Sn ratio. The minimum resistivity is 5.21×10^3Ω·cm at a doping ratio of 3.6%.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2015年第12期1759-1764,共6页
Journal of The Chinese Ceramic Society
基金
武汉市科技计划(2015010101010006)资助
关键词
锑掺杂硫化锡薄膜
化学浴沉积
光电性能
Hall效应
tin-doped tin sulphide thin films
chemical bath deposition
optical and electrical properties
Hall effect
