期刊文献+

引入纳米多孔强化工业硅中杂质脱除研究

Research on impurity removal of industrial silicon powder through introduce of nano-porous structure
下载PDF
导出
摘要 以工业硅粉为原料,分别采用化学刻蚀法,一步金属辅助刻蚀法和两步金属辅助刻蚀方法制备多孔工业硅粉,考查不同氧化剂物种及其浓度对多孔工业硅粉形貌结构及主要金属杂质Fe、Al的去除影响,结果表明:不同的氧化剂物种对粉末多孔硅的形貌结构和Fe、Al杂质的去除都有重要影响.相比而言,金属纳米颗粒辅助刻蚀方法在孔道生长速率、孔道形貌结构调控方面均表现更加出色,通过选取合适的氧化剂种类和浓度,可以高效地获得孔径在50~300 nm之间,孔深在约60μm范围内可调的多孔工业硅粉,纳米孔道的引入对工业硅中主要金属杂质Fe、Al的去除均表现出较好的促进作用,特别是两步金属纳米颗粒辅助刻蚀技术对增强Fe、Al杂质的去除作用最为明显,在较优试验条件下,Fe、Al杂质的去除效率分别可达99.8%和94.7%. Based on industrial silicon powders, porous silicon powders were prepared with methods of chemical etching, one-step metal-assisted chemical etching (1-MACE), and two-step metal-assisted chemical etching (2-MACE). The effects of species and concentrations of oxidants on the morphologies and structures of porous industrial silicon as well as the removal rate of metal impurities Fe and Al were investigated. Metal nanoparticles assisted etching methods are better at controlling the growth rate and morphologies of the porous channel. With proper species and concentrations of oxidants, porous industrial silicon powders with controllable channel diameter in range of 50-300 nm and depth within about 60 μm can be effectively obtained by MACE methods. Nano-channels can improve the removal efficiencies of Fe and Al impurities from industrial silicon, which particularly reached 99.8 % and 94.7 % under optimum experimental conditions with 2-MACE method.
出处 《有色金属科学与工程》 CAS 2015年第6期7-13,共7页 Nonferrous Metals Science and Engineering
基金 国家自然科学基金资助项目(51504117) 云南省复杂有色金属资源协同创新中心项目(2014XTZS009) 昆明理工大学人陪项目(KKSY201563032) 云南省教育厅基金项目(2015Y069)
关键词 工业硅粉 化学刻蚀 金属辅助化学刻蚀 多孔工业硅 杂质去除 industrial silicon powder chemical etching metal-assisted chemical etching porous industrial silicon impurity purification
  • 相关文献

参考文献28

  • 1薛霜霜,何洪波,余长林.稀土上转换用于提高半导体化合物光催化效率的研究进展[J].有色金属科学与工程,2015,6(4):97-103. 被引量:6
  • 2王新刚.太阳能级多晶硅生产技术研究现状及展望[J].化工技术与开发,2012,41(9):27-33. 被引量:22
  • 3Braga A F B, Moreira S P, Zampieri P R, et al. New processes for the production of solar-grade polycrystalline silicon: A review[J]. Solar Energy Materials and Solar Cells, 2008, 92(4):418-424.
  • 4谭毅,郭校亮,石爽,董伟,姜大川,李佳艳.冶金法制备太阳能级多晶硅研究现状及发展趋势[J].材料工程,2013,41(3):90-96. 被引量:14
  • 5Walter V. Production of pure silicon:US,2972521[P]. 1961-02-21.
  • 6Hunt L, Dosaj V, McCormick J, et al. Purification of metallurgical-grade silicon to solar-grade quality[J]. Electrochemical Society, 1976:200-215.
  • 7Santos I, Goncalves A, Santos C S, et al. Purification of metallurgical grade silicon by acid leaching[J]. Hydrometallurgy, 1990, 23(2):237-246.
  • 8Sahu S, Asselin E. Effect of oxidizing agents on the hydrometallurgical purification of metallurgical grade silicon[J]. Hydrometallurgy, 2012, 121:120-125.
  • 9Juneja J, Mukherjee T. A study of the purification of metallurgical grade silicon[J]. Hydrometallurgy, 1986, 16(1):69-75.
  • 10Dietl J. Hydrometallurgical purification of metallurgical-grade silicon[J]. Solar Cells, 1983, 10(2):145-154.

二级参考文献41

共引文献71

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部