摘要
采用化学水浴沉积法(CBD)在钠钙玻璃衬底上制备硫化镉(CdS)薄膜,研究不同硫酸镉(CdSO_4)浓度下产生的本征缺陷对CdS薄膜光电学性质的影响。采用光致发光光谱、紫外-可见分光光度计及霍尔效应测试系统对薄膜的本征缺陷、光学及电学性质进行分析,发现CdS薄膜主要存在镉间隙(Cdi)及硫空位(VS)等本征缺陷,且VS随CdSO_4浓度的降低而逐渐减少。同时,VS缺陷的减少有利于薄膜透过率的提高,但在一定程度上降低了薄膜的电导率。根据透过率及其相关公式可知,半导体材料中透过率与电导率成e指数反比关系,适当减小薄膜的电导率可以使其透过率得到大幅度的提高,理论解释与实验结果相一致。
CdS thin films were deposited on soda-lime glass（SLG） substrates by chemical bath deposition（CBD）.Effects of intrinsic defects on electrical and optical properties of CdS thin films deposited at various concentration of CdSO4 in solution were systemically investigated. Photoluminescence（PL）, UV-Visible spectrophotometer and Hall-effect system were used to study intrinsic defects, optical and electrical properties of CdS thin films. Two intrinsic defects（Cdiand VS） were found to be existed in CdS films using photoluminescence（PL）, and these defects are donor defects. It is found that the intrinsic defects（VS） decrease with the reduction of CdSO4 concentration. The variation of the intrinsic defects results in the shifts of transmittance and conductivity.According to the related equations of transmittance, it is indicated that the transmittance is inversely proportional to conductivity of semiconductor materials. Therefore, the decrease of donor defects（VS） results in the reduction of conductivity and significant increase of the transmittance of CdS thin films, well supporting our experimental results.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2016年第1期111-116,共6页
Chinese Journal of Inorganic Chemistry
基金
国家自然科学基金(No.21404100)
吉林市科技局基金(No.20156423)资助项目
关键词
本征缺陷
CDS薄膜
化学水浴沉积法
电学性质
光学性质
intrinsic defects
CdS thin film
chemical bath deposition
optical property
electrical property
