摘要
采用直流磁控溅射法在玻璃基片上制备了Au,Cu,Pt和Ta底层的Co/Pt多层膜样品,对周期层中Co和Pt进行了调制,获得了各底层的最佳多层膜结构,研究了各底层对Co/Pt多层膜的反常霍尔效应的影响。经研究发现,当底层厚度均为3 nm、周期层中Pt厚度为1.5 nm,多层膜中Co层的厚度均为0.4 nm时,样品霍尔回线的矩形度最好,对应样品具有更好的垂直磁各向异性(PMA)。在相同厚度条件下,Au和Cu作为Co/Pt多层膜的底层在保持样品的垂直磁各向异性方面的作用远不如Pt和Ta底层,而且样品的霍尔电阻比Pt和Ta做底层时要小很多。在研究的4种不同金属底层多层膜中,Pt底层可以使多层膜周期层以更薄的Pt厚度获得垂直磁各向异性,从而使得Co/Pt多层膜的磁矩垂直于膜面,但由于Pt层对样品的分流作用过大,导致样品的霍尔电阻有所降低;而Ta作为底层的Co/Pt多层膜既可以周期层以较薄的Pt保持样品的垂直磁各向异性,又可使得样品具有大得多的霍尔电阻,可研究其与互补金属氧化物半导体(CMOS)的集成。
The impact of different underlayers such as Au, Cu, Pt and Ta on anomalous Hall effect of Co/Pt muhilayers was investigated. The samples were successfully manufactured by magnetron sputtering technique on the glass substrate. The thicknesses of Co and Pt were modulated and the optimum samples with various underlayers were obtained. When the underlayer thickness was fixed at 3 nm, the Pt thickness in the periodic layer was fixed at 1.5 nm, and the thickness of Co was fixed at 0.4 nm, it was more appropriate for the multilayers to have good perpendicular magnetic anisotropy（PMA） and rectangle degree of the Hall curves. Pt and Ta underla- yer played a much greater role in maintaining the PMA of samples than that of Au and Cu. The Hall resistance of Au and Cu underlayer samples was smaller than that of Ta and Pt. The Pt underlayer could make the magnetic moment of Co/Pt multilayer perpendicular to the films with a thinner Pt in the periodic layer but the Hall resistance dropped due to the larger shunting effect on the samples than others. Ta underlayer could provide PMA to Co/Pt muhilayer with very thin Pt layer and made the samples have a much greater Hall resistance, so they were more suitable for integration with complementary metal oxide semiconductor （CMOS）.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2016年第1期32-37,共6页
Chinese Journal of Rare Metals
基金
国家自然科学基金项目(11174020)
北京市教委教学名师项目(PXM2013_014213_000013)资助
