摘要
利用Silvaco-TCAD半导体器件仿真软件,全面系统地分析了光照区域结构参数对硅NPN型红外光电晶体管光电转换特性的影响。仿真结果表明:厚度为240 nm/130 nm的SiO_2/Si_3N_4双层减反射膜在特征波长(λ=0.88μm)处具有最优的光吸收效果和峰值光响应度(RM);为满足器件对红外波段的有效吸收和响应,外延层厚度应选择为55~60μm;提高外延层电阻率虽可增大集-射击穿电压(BVCEO),但较高的外延层电阻率同时会降低红外波段光谱响应度;为了获得较高的红外光谱响应度,同时抑制可见光波段的响应,光照区域基区表面浓度应选择为5×1019cm^(-3),结深应选择为2.5μm。
The influences of structure parameters in the light region on photoeletric conversion characteristics of the silicon NPN phototransistors are studied comprehensively and systematically by using Silvaco-TCAD semiconductor device simulation software. The simulation results show that 240 nm/130 nm thick SiO2/Si3N4 double layer anti-reflection coatings has more effective absorption spectrum and higher Peak light responsivity（RM） for a characteristic wavelength（ A = 0.88 μm）. In order to meet the effective absorption and response of the device to the infrared band, the epitaxial layer thickness of 55-60 μm is required. Although increased epitaxial layer resistivity can improve the collector-emitter breakdown voltage （BVcEo ）, but higher epitaxial layer resistivity will also reduce the infrared spectral responsivity. In order to obtain higher infrared spectral responsivity, at the same time suppress the response of the visible light wavelengths, the base surface concentration in the light region of 5 × 10^19 cm^-3 is and the junction depth of 2.5 μm is required. required,
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2016年第1期112-118,共7页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金项目(11304020)
关键词
光电晶体管
减反射膜
电阻率
少子寿命
掺杂浓度
光谱响应度
phototransistors
antireflection coating
resistivity
minority carrier lifetime
doping concentration
spectral responsivity
