摘要
为了满足衰减器低成本、小尺寸和可重用的发展需求,提出一种基于π型多晶硅电阻网络的宽频带（0-20GHz）片上衰减器。对精确控制多晶硅方块电阻（40-400Ω/sq）进行研究,通过控制硼B离子的掺杂浓度（5×1018-1.4×1020cm-3）和热退火条件（950-1 050℃,10-30min）,得出薄膜方块电阻随工艺条件的变化规律,方阻误差小于4%。结合片上衰减器的尺寸需求选择方阻,设计了10和20dB片上衰减器,采用HFSS三维建模软件对器件进行仿真优化。仿真结果表明：在0-20GHz内,10dB衰减器的衰减精度为0.26dB,电压驻波比（VSWR）小于1.13;20dB衰减器的衰减精度为0.04dB,VSWR小于1.29。电阻网络的面积均为265μm×270μm,衰减器尺寸小于1 000μm×800μm。所设计的片上衰减器精度高,适用于微波测试仪器前端。
An on-chip 0-20GHz attenuator was developed based on a n-type polysilicon resistive network as low cost attenuators with adjustable size that are compatihle with other circuits. The sheet resistance （100-400 Ω/sq） of the polysilicon resistor can be controlled by varying the boron-doping concentrations （5 × 10^18- 1.4× 10^20cm^-3） and post-annealing conditions （950-1 050 ℃, 10- 30 min）. The resistance error was controlled less than 4 %. The onchip attenuator size can be set by selecting the sheet resistance for the on-chip 10 dB and 20 dB attenuating resistive networks. The devices were modelled in 3-D with HFSS with the simulation results showing excellent performance. The attenuation accuracies of the 10 dB and 20 dB attenuators were 0.26 dB and 0.04 dB over the entire frequency band （0-20 GHz）, while the voltage standing wave ratios （VSWR） were less than 1.13 and 1.29, respectively. Both resistive networks were 265 μm× 270 μm in size while both attenuators were less than 1 000 μm× 800 μm in size. These high accuracy attenuatorscan be used in microwave test instruments.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2015年第11期1264-1268,共5页
Journal of Tsinghua University(Science and Technology)
基金
国家自然科学基金面上项目(91023040)
关键词
多晶硅电阻
电阻衰减网络
片上衰减器
polysilicon resistor
resistive attenuation network
onchip attenuator
