摘要
为实现低成本原子力显微镜(AFM)探针的制备,开展了基于6英寸(1英寸=2.54 cm)绝缘衬底上的硅(SOI)的AFM探针制备方法的研究,实验分析了采用KOH湿法腐蚀纳米硅针尖的时间对针尖形貌的影响,给出了纳米硅针尖的缺陷类型以及产生缺陷针尖的原因,同时针对深硅干法刻蚀过程中散热不均的现象,提出采用导热系数高的黏接材料来改善散热问题。实验结果表明,基于6英寸SOI制备的AFM探针悬臂梁厚度偏差为±0.5μm,成品率大于90%,对制备的自锐式AFM探针与商用AFM探针进行了测试对比,自制AFM探针的扫描质量达到了当前商用探针的水平,满足形貌表征的需求。
In order to realize the low cost fabrication of the atomic force microscopy（AFM）probes,the fabrication of the AFM probes based on the 6-inch（1inch=2.54 cm）silicon on insulator（SOI）wafer was investigated.Through experiments,the effects of the wet etching time in KOH on the shapes of the silicon tips were analyzed.The defect types of the silicon tip and its cause of formation were commented.In view of the phenomenon of the uneven heat emission during the silicon deep dry etching process,a high thermal conductivity material was applied to improve the heat emission.The experimental results show that the thickness deviation of the AFM probe cantilever fabricated on the 6-inch SOI wafer can be controlled within the range of±0.5μm,and the yield is more than90%.The fabricated self-sharpening AFM probes and commercial AFM probes were test and compared.The scanning quality of the fabricated AFM probes reaches the current level of commercial probes and meets the needs of morphology characterization.
出处
《微纳电子技术》
北大核心
2016年第2期119-123,共5页
Micronanoelectronic Technology
基金
国家自然科学基金项目(61573346
61104226)
中国科学院青年促进会人才项目(2014278)
中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室资助项目
江苏省科技支撑计划工业部分资助项目(BE2013056)
