摘要
介绍了显微红外热像仪连续稳态测温技术的特点,通过试验说明了连续稳态显微红外测温技术在半导体器件动态热分析中的应用。在器件的结温测试中,通过对器件持续的加电,利用连续稳态显微红外测温技术连续地增加偏执电压的测试,研究了器件的不同位置在不同的加电条件下的发热情况。另外,在器件的破坏性试验中,利用显微红外热像仪的连续稳态测温技术,研究了器件的终值温度和破坏情况,为设计者改进设计和控制工艺提供了很好的指导。
The characteristics of continuous steady-state micro infrared temperature measurement technology are introduced and the application of the technology in the dynamic thermal analysis of semiconductor device is explained through several tests. In the junction temperature measurement of a power tube, the thermal conditions of different positions of the device under different power conditions are studied with the infrared temperature measurement technology to continuously charge the device. Besides, in destructive test, the maximum junction temperature and the damage situation of the device are studied through the infrared temperature measurement technology, which provides a good guide for designer to improve design and control technology.
出处
《电子产品可靠性与环境试验》
2016年第1期16-20,共5页
Electronic Product Reliability and Environmental Testing
关键词
半导体器件
连续稳态显微红外测温技术
动态热分析
semiconductor device
continuous steady-state infrared temperature measurementtechnology
dynamic thermal analysis
