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一种4阶曲率补偿低温漂低功耗带隙基准源 被引量:3

A Low Temperature Coefficient and Low Power 4th-Order Curvature Compensated Bandgap Reference
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摘要 基于UMC 0.25μm BCD工艺,设计了一种4阶曲率补偿的低温漂带隙基准电压源。通过设置正负温度系数相异的电阻的比值,抵消了三极管发射极-基极电压泰勒级数展开后的高阶项,实现了4阶曲率补偿。经过Hspice仿真验证,基准输出电压为1.196V,-40℃~150℃温度范围内温度系数达到1.43×10-6/℃;低频时电源抑制比为-70.8dB,供电电压在1.7~5V变化时,基准输出电压的线性调整率为0.039%,整体静态电流仅为9.8μA。 Based on UMC 0.25μm BCD technology,a low temperature coefficient and low power consumption bandgap reference with 4th-order curvature compensation was proposed.The 4th-order curvature compensation was achieved by using the ratio of resistance with different positive temperature coefficient and negative temperature coefficient to counteract the high-order items of the emitter-base voltage expanded in Taylor series.By simulation and verification with HSPICE,the circuit achieved an output voltage of 1.196 V,a temperature coefficient of 1.43×106/℃in the temperature range of-40 ℃to 150 ℃,a PSRR of-70.8dB at low frequency and a linear regulation of0.039%in the power supply voltage range of 1.7Vto 5V.The total quiescent current was only 9.8μA.
出处 《微电子学》 CAS CSCD 北大核心 2016年第1期34-37,共4页 Microelectronics
基金 国家自然科学基金资助项目(61271090) 国家自然科学基金重点项目(61531016)
关键词 带隙基准 曲率补偿 低温漂 低功耗 Bandgap reference Curvature compensated Low temperature coefficient Low power consumption
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  • 1陈浩琼,高清运,秦世才.CMOS带隙电压基准的误差及其改进[J].固体电子学研究与进展,2005,25(4):531-535. 被引量:13
  • 2李树荣,李丹,王亚杰,姚素英.一种适应于低电压工作的CMOS带隙基准电压源[J].天津大学学报,2006,39(1):119-123. 被引量:4
  • 3张红南,曾健平,田涛.分段线性补偿型CMOS带隙基准电压源设计[J].计测技术,2006,26(1):35-38. 被引量:4
  • 4杨喆,姚素英,徐江涛.一种用于升压型DC/DC变换器的低压带隙基准源[J].微电子学,2007,37(1):105-108. 被引量:5
  • 5Rincon-Mora G A, Allen P E. A 1.1-V current-mode and piecewise-linear curvature-corrected bandgap reference[J]. IEEE J Solid-State Circuits, 1998,33 (10): 1551- 1554.
  • 6Lin S L, SalamaC A T. A VBE(T) model with application to bandgap reference design [J]. IEEE J Solid-State Circuits, 1985,20 (6) : 1283-1285.
  • 7Guan Xiaokang, Wang A, Ishikawa A, et al. A 3 V 110 W μ3.1 ppm/℃ curvature-compensated CMOS bandgap reference[C]//IEEE ISCAS. USA, 2006: 2861- 2864.
  • 8Wang Xichuan, Si Cuiying, Xu Xing. Curvature- compensated CMOS bandgap reference with 1.8-V operation[C]//IEEE Proceedings of HDP'06. Shanghai, China, 2006.20-23.
  • 9Lin Yeong-Tsair, Chung Wen-Yaw, Wu Dong-Shiu, et al. A low voltage CMOS bandgap reference[C]//IEEE- NEWCAS Conference (The 3rd lnternational). USA, 2005 : 227-230.
  • 10TsividisY. Accurate analyses of temperature effects in Ic- Vbe characteristics with application to bandgap reference sources[J].IEEE J Solid-State Circuits, 1980, 15 (6) : 1076-1084.

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