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Experimental study on heavy ion single-event effects in flash-based FPGAs 被引量:2

Experimental study on heavy ion single-event effects in flash-based FPGAs
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摘要 With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions. With extensive use of flash-based field-pro- grammable gate arrays (FPGAs) in military and aerospace applications, single-event effects (SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi ProASIC3 product family. The relation between the cross section and different linear energy transfer (LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 → 1 upsets (zeros) and 1 → 0 upsets (ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 MeV cm2/mg. Post-beam tests show that the programming module is damaged due to the high-LET ions.
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2016年第1期98-105,共8页 核技术(英文)
基金 the National Natural Science Foundation of China(Nos.11079045,11179003 and 11305233)
关键词 Flash 单粒子效应 FPGA 重离子 实验 现场可编程门阵列 设备选择 航天应用 Single-event effects (SEEs) Flash-basedFPGAs HIRFL Heavy ion experiments
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  • 1M. Nicolaidis (ed.), Soft errors in modern electronic systems, in frontiers in Electronic Testing, vol. 41(2011). Doi: 10.1007/978- 1-4419-6993-4.
  • 2L. Sterpone, N. Battezzati, F.L. Kastensmidt et al., An analytical model of the propagation induced pulse broadening (PIPB) effects on single event transient in flash-based FPGAs. IEEE Trans. Nucl. Sci. 58, 2333-2340 (2011). doi:10.1109/TNS.2011. 2161886.
  • 3Z.G. Zhang, J. Liu, M.D. Hou et al., Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation. Chin. Phys. B 22, 086102 (2013). doi: 10.1088/1674-1056/22/8/086102.
  • 4P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank et al., Current and future challenges in radiation effects on CMOS electronics. IEEE Trans. Nucl. Sci. 57, 1747-1763 (2010). doi:10.1109/TNS.2010. 2042613.
  • 5Y. Yahagi, H. Yamaguchi, E. Ibe et al., A novel feature of neutron-induced multi-cell upsets in 130 and 180 nm SRAMs. IEEE Trans. Nucl. Sci. 54, 1030-1036 (2007). doi: 10.1109/TNS. 2007.897066.
  • 6S. Rezgui, J.J. Wang, E.C. Tung et al., New methodologies for SET characterization and mitigation in flash-based FPGAs. IEEE Trans. Nucl. Sci. 54, 2512-2524 (2007). doi: 10.1109/TNS.2007. 910126.
  • 7F. Abate, L. Sterpone, M. Violante et al., A study of the single event effects impact on functional mapping within flash-based FPGAs. In Design, Automation and Test in Europe Conference and Exhibition, 2009 DATE'09, (2009), pp. 1226-1229. doi:10. 1109/DATE.2009.5090850.
  • 8D.M. Hiemstra, F. Chayab, Z. Mohammed, Single event upset characterization of the Virtex-4 field programmable gate array using proton irradiation. In Radiation Effects Data Workshop (REDW), 2006 IEEE, (2006), pp. 105-108. doi:10.1109/REDW. 2006.295476.
  • 9D.M. Hiemstra, G. Battiston, P. Gill, Single event upset charac- terization of the Virtex-5 field programmable gate array using proton irradiation. In Radiation Effects Data Workshop (REDW), 2010 IEEE, (2010), pp. 4-4. doi:10.1109/REDW.2010.5619490.
  • 10D.M. Hiemstra, V. Kirischian, Single event upset characterization of the Virtex-6 field programmable gate array using proton irra- diation. In Radiation Effects Data Workshop (REDVO, 2012 IEEE (2012), pp. 1-4. doi:10.1109/REDW.2012.6353716.

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