期刊文献+

功率型LED结温电学法测量研究 被引量:1

The Study of Electrical Measurement Method of High Power LED Junction Temperature
下载PDF
导出
摘要 随着节能技术的发展,LED作为一种半导体照明技术,得到研究者的关注。以此为背景,针对LED灯工作过程中产生大量热量的散热技术开展研究。基于LED正向电压随温度变化的原理,运用电学法,以1W普通正装GaN基LED为例,对其温度系数和正向压降进行测量,分析得出热阻与结温值。并利用红外热像仪法和管脚温度法对电学法测温结果进行了验证,证明了该方法的测温精度。 With the development of energy-saving technologies,LED,as a technology of semiconductor lighting,has got concern by researchers.Under this background,the heat dissipation technology of LED is studied on the mass heat produced when it woks.Based on the relationship between LED forward voltage and the temperature,the electrical measurement method is presented in this paper.By measuring the temperature coefficient and the forward voltage of 1W ordinary GaN-based LED,the thermal resistance and junction temperature are analyzed and obtained.Finally,the accuracy of this measurement method is verified by comparison with the infrared thermal imaging method and pin temperature method.
出处 《常州大学学报(自然科学版)》 CAS 2016年第2期88-92,共5页 Journal of Changzhou University:Natural Science Edition
基金 常州市2012自然科学基金资助(CJ20120024)
关键词 功率型LED 结温 热阻 电学法 high-power LED junction temperature thermal resistance electrical measurement method
  • 相关文献

参考文献20

  • 1YUNG K C, YUNG H L, CHOY H S. Heat transfer a- nalysis of a high-brightness LED array on PCB under dif- ferent placement configurations [J]. International Com- munications in Heat and Mass Transfer, 2014, 53: 79-86.
  • 2LIU D J, YANG H Y, YANG P. Experiment and numerical approach on junction temperature of high- power LED [J]. Microelectronics Reliability, 2014, 54(5):926-931.
  • 3郭常青,闫常峰,方朝君,李文博.大功率LED散热技术和热界面材料研究进展[J].半导体光电,2011,32(6):749-755. 被引量:25
  • 4付贤政,胡良兵.LED灯的散热问题研究[J].照明工程学报,2011,22(3):73-77. 被引量:18
  • 5FARANDA R, GUZZETTI S, LAZAROIU G C, et al. Refrigerating liquid prototype for LED's thermal man- agement[J]. Applied Thermal Engineering, 2012, 48. 155-163.
  • 6AYAWARDENA A, LIU Y W. Analysis of three differ- ent junction temperature estimation methods for AC LEDs[J]. Solid-State Electronics, 2013(86) 11-16.
  • 7WEN P Y, LID Y, ZHANG S M, et al. High accuracy thermal resistance measurement in GaN/InGaN laser di- odes[J]. Solid-State Electronics, 2015(106) . 50-53.
  • 8XI Y,XI J Q,GESSMANN T, et al. Junction and Carrier temperature measurement in deep-ultraviolet light- emitting diodes using three methods[J]. Applied Physics Letters, 2005, 86(3). 031907.
  • 9HANG F Y, LIU W H, LI Y Q, et al. Research on the iunction-temperature characteristic of GaN light-emitting diodes on Si substrate[J]. Journal of Luminescence, 2007 (122) : 693-695.
  • 10李炳乾,布良基,甘雄文,范广涵.LED正向压降随温度的变化关系研究[J].光子学报,2003,32(11):1349-1351. 被引量:24

二级参考文献106

共引文献90

同被引文献5

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部