摘要
基于InGaAs/InAlAs/InPHEMT设计制作了一款W波段功率放大器芯片。采用分子束外延技术生长了材料结构经过优化设计的InPHEMT外延材料,采用电子束光刻和三层胶工艺制作有源器件的超深亚微米T型栅,并采用神经网络模型对器件进行精确建模。电路采用4级级联提高电路的增益,末级采用4胞并联器件有效地分散热源。采用全波电磁场仿真技术设计电路版图有效降低芯片内部的电磁耦合。芯片采用在片脉冲测试,测试结果显示,在脉宽为10μs、占空比为10%、栅压为-0.15V和漏极电压为2V条件下,92~97GHz频率内功率放大器的小信号增益大于15dB,频率为94GHz时的输出功率达到300mW。
A W-band power amplifier chip based on the InGaAs / InAlAs / InPHEMT process was designed and fabricated. The epitaxial materials of the In P HEMT was grew by molecular beam epitaxy which the structure was optimized. The ultra-deep submicron T-gate of the active devices was fabricated with electron-beam lithography and tri-layered resist technology. The device was precise modeled by the neural network model. The cascade 4-stages topology was used for increasing the gain of circuit,and the parallel connection 4-cells was used in the last stage dispersed the heat source. The circuit layout was designed with the full-wave electromagnetic simulation technology,and the electromagnetic interference in the chip was decreased. The chip was tested on wafer at pulse-mode. The test results show that,the small-signal gain of the power amplifier is higher than 15 d B at frequency range of 92 GHz to 97 GHz and the output power is 300 m W at the frequency of 94 GHz,when the pulse wide is 10 μs,the duty ratio is10%,the gate voltage Vgsis- 0. 15 V and the voltage drain Vdsis 2 V.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第4期267-270,275,共5页
Semiconductor Technology
