摘要
采用射频(RF)等离子方法,对Ga As样品进行了150 W高功率等离子氮钝化及快速退火处理。经过该方法钝化后的样品,光致发光(PL)强度上升了91%。XPS分析得出,Ga As样品表面的氮化效果随着氮等离子体功率的增加而逐渐趋于明显。氮化后的样品表面未发现氧化物残余。样品在空气中加热放置30 d,PL强度下降不明显,说明表面钝化层具有良好的稳定性。
Ga As substrate was treated by N＋with 150 W RF plasma and followed by rapid thermal annealing. The PL intensity increased by 91%. XPS analysis indicates that GaAs surface has been nitrided after high power RF N＋plasma processing,and the nitridation effect is enhanced under higher RF power. No oxide is found on nitrided GaAs surface. The prepared samples were kept on heat plate in open air for PL stability evaluation,little drop was found during a 30 days test.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2016年第4期428-431,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金(61176048
61177019
61308051)
吉林省科技发展计划(20150203007GX
20130206016GX)
中物院高能激光重点实验室基金(2014HEL01)资助项目
