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A sensitive charge scanning probe based on silicon single electron transistor

A sensitive charge scanning probe based on silicon single electron transistor
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摘要 Single electron transistors(SETs) are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insulatorbased SET scanning probe. The fabricated SET is located about 10 m away from the probe tip. The SET with a quantum dot of about 70 nm in diameter exhibits an obvious Coulomb blockade effect measured at 4.1 K. The Coulomb blockade energy is about 18 me V, and the charge sensitivity is in the order of 10^-(5)–10(^-3)e/Hz^(1/2). This SET scanning probe can be used to map charge distribution and sense dynamic charge fluctuation in nanodevices or circuits under test, realizing high sensitivity and high spatial resolution charge detection. Single electron transistors(SETs) are known to be extremely sensitive electrometers owing to their high charge sensitivity. In this work, we report the design, fabrication, and characterization of a silicon-on-insulatorbased SET scanning probe. The fabricated SET is located about 10 m away from the probe tip. The SET with a quantum dot of about 70 nm in diameter exhibits an obvious Coulomb blockade effect measured at 4.1 K. The Coulomb blockade energy is about 18 me V, and the charge sensitivity is in the order of 10^-(5)–10(^-3)e/Hz^(1/2). This SET scanning probe can be used to map charge distribution and sense dynamic charge fluctuation in nanodevices or circuits under test, realizing high sensitivity and high spatial resolution charge detection.
出处 《Journal of Semiconductors》 EI CAS CSCD 2016年第4期73-76,共4页 半导体学报(英文版)
基金 Project supported by the Instrument Developing Project of the Chinese Academy of Sciences(No.YZ201152) the National Natural Science Foundation of China(No.11403084) the Fundamental Research Funds for Central Universities(Nos.JUSRP51510,JUDCF12032) the Graduate Student Innovation Program for Universities of Jiangsu Province(No.CXLX12_0724)
关键词 single electron transistor scanning probe silicon-on-insulator Coulomb blockade charge detection single electron transistor scanning probe silicon-on-insulator Coulomb blockade charge detection
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参考文献26

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