摘要
ZnSe是一种宽禁带的Ⅱ-Ⅵ族半导体材料,适宜作为光电器件的功能层。通过磁控溅射方法制备了ZnSe薄膜并进行了掺杂改性。在溅射气体中通入N2的条件下制备了ZnSe掺N薄膜;采用共溅射法制备了ZnSe掺Al薄膜。对制备的薄膜进行了成分、结构、光学和电学性质表征。发现在不同沉积温度下可分别得到六方相和立方相ZnSe;掺杂后的薄膜光学吸收边发生变化,得到了N型和P型导电的薄膜,掺杂薄膜的暗态电导率随温度的变化偏离了Arrhenius关系,表明杂质的引入影响了ZnSe的电学性质。
ZnSe,a Ⅱ-Ⅵ semiconductor material with a wide bandgap,has potential in optoelectronic devices.ZnSe thin films were deposited and doped by a magnetron RF sputtering systemunder which ZnSe： N samples were prepared under N2 ambient and ZnSe alloy and Al targets were sputtered simultaneously to obtain ZnSe： Al. The compositional,structural,optical and electrical properties of films were studied in this paper. The results showed that the films with the wurtzite structure or cubic phase can be prepared at different temperatures,and that the optical absorption edge changed with doping of ZnSe films,as a result of which N-type and p-type thin films were obtained while an obvious deviation from Arrhenius formula was observed in the conductivity and temperature measurements. It is therefore demonstrated that the impurity has affected the optoelectronic properties of ZnSe thin films.
出处
《西华师范大学学报（自然科学版）》
2016年第1期51-55,124,共6页
Journal of China West Normal University(Natural Sciences)
基金
国家高技术研发计划(2015AA050610)
四川省科技支撑计划(2016GZX0272)
