摘要
纳米硅波导具有高三阶光学非线性系数，低拉曼噪声以及尺寸小可集成的特点，是实现1．55微米通信波段关联双光子的理想材料。，文章研究了一种在纳米硅波导中利用波导双折射特性实现光通信波段偏振纠缠光子对产生的方法，利用纳米硅波导的群双折射抑制矢量自发四波混频过程，通过调整泵浦光偏振实现最大偏振纠缠态产生。该方法利用纳米硅波导的双折射特性，无需复杂的附加光路和片上集成偏振旋转器，为实现片上集成的偏振纠缠光源器件提供了一种简单途径。
Due to the high three-order optical nonlinear coefficient, low Raman noise and small size of silicon wire waveguide, it is one of the most promising materials to realize the on- chip integrated quantum light sources at 1550nm. A new scheme of polarization entanglement generation in optical communication band, which is based on the birefringence in silicon wire waveguide, is proposed and demonstrated. The birefringence is utilized to suppress the vector spontaneous four-wave mixing process, and the pump light polarization is adjusted to achieve the maximum polarization entangled state. No polarization maintaining loops or any silicon po- larization rotators are need in this scheme. It provides a simple way to realize silicon integrated sources for polarization entanglement generation.
出处
《电子对抗》
2016年第2期22-24,33,共4页
Electronic Warfare
关键词
量子
纠缠
硅波导
四波混频
quantum
entanglement
silicon waveguide
spontaneous four-wave mixing process
