摘要
采用射频等离子方法,对Ga As(100)衬底片表面进行干法硫等离子体钝化,旨在得到性能稳定含硫钝化层。样品经过360℃温度条件下的快速热退火,光致发光(PL)测试表明,钝化后的样品PL强度上升了71%。同时,钝化样品的稳定性测试结果表明,样品放置在实验室空气中30 d,其PL强度未出现明显变化,说明Ga As的等离子体干法硫钝化具有较好的性能稳定性。
Sulfur-plasma process was proposed to clean and passivate the surface of（ 100） oriented Ga As wafers for stable sulfur passivation effect. The photoluminescence（ PL） intensity of processed samples with sulfur-plasma had an obvious improvement after 360 ℃ annealing,and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of Ga As surface treated by sulfur-plasma process has good stability.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2016年第5期556-560,共5页
Chinese Journal of Luminescence
基金
国家自然科学基金(61176048
61177019
61308051)
吉林省科技发展计划(20150203007GX
20130206016GX)
中物院高能激光重点实验室基金(2014HEL01)资助项目
