摘要
Ga N微波功率管在基站通信等领域具有重要应用,其可靠性对相关设备的性能有直接影响。利用红外热像分析技术测量器件的峰值结温,基于专用射频加速老化试验系统,在频率为2.85 GHz、输入功率为40.5 d Bm、脉冲宽度为3 ms、占空比为30%的脉冲射频工作条件下,对S波段Ga N微波功率管进行了壳温为150℃的加速寿命试验。应用Arrhenius模型对试验结果进行了分析和计算,推导出该器件在壳温为90℃的工作条件下其平均失效时间可达2.97×106h。结果表明,采用此试验方法可以用来评估第三代Ga N微波功率器件的可靠性水平。
Ga N microwave power transistor has important applications in base-station communication fields. Its reliability has directly effects on the characteristics of the equipment. By using infrared thermal image analysis technique, the peak junction temperature of the microwave power transistor was measured. Based on the special designed RF accelerated burn-in system,pulse RF accelerated life test of S-band Ga N HEMT was carried out under the RF working conditions, such as the frequency is2. 85 GHz,the input power is 40. 5 d Bm,the pulse width is 3 ms,the duty radio is 30%,and the case temperature is 150 ℃. According to the Arrhenius model,the data of life test were analyzed and used for calculating the mean time to failure of the S-band Ga N device,which was 2. 97 × 106 h at the working condition of the case temperature of 90 ℃. The results show that the method of accelerated life test can provide the credible evaluation for the third generation Ga N microwave power transistor.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第5期394-397,共4页
Semiconductor Technology
