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碳化硅电力电子器件在电网中的应用展望 被引量:24

Prospects of SiC Power Electronic Device Application in Power Grid
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摘要 碳化硅电力电子器件具有高压、高温和高效率等优势,是智能电网中理想的电力电子器件。介绍了近年来碳化硅材料及器件在研发和产业化方面的最新发展。随着6英寸碳化硅单晶和外延产品的问世并日趋成熟,更高电压等级、更大导通电流、更高效的碳化硅电力电子器件将被研发出来。并对其在电网中的应用现状与前景进行了展望:碳化硅器件在诸如分布式发电并网装置、电力电子变压器和电力电子断路器等方面显示了巨大的性能优势和市场前景。 Silicon carbide( SiC) power devices have the advantages of high voltage,high temperature and high frequency,which showgreat potential to be used in future power grid. Several major breakthroughs in RD and industrialization of SiC material and devices obtained resently are introduced. With 6 inch 4H-SiC wafer and its extensional products are avaliable and getting more mature,SiC power devices with higher voltage,larger conduct current and more efficiency will be developed. The perspectives of applications of SiC power electronic devices in power grid are proposed. Full SiC power devices have shown great advantanges and market perspect of distributed energy converter,solid-state transformer and solid-state breaker.
作者 盛况 郭清
出处 《南方电网技术》 北大核心 2016年第3期87-90,9,共4页 Southern Power System Technology
基金 国家高技术研究发展计划(863计划)(2014AA052401) 国家杰出青年科学基金(51225701)~~
关键词 碳化硅 电力电子器件 电网 silicon carbide(SiC) power electronic device power grid
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参考文献14

  • 1SHENG Kuang GUO Qing ZHANG Junming QIAN Zhaoming.Development and Prospect of SiC Power Devices in Power Grid[J].中国电机工程学报,2012,32(30). 被引量:42
  • 2饶宏.南方电网大功率电力电子技术的研究和应用[J].南方电网技术,2013,7(1):1-5. 被引量:51
  • 3NASHIDA N, HINATA Y, HORIO M, et al. All-SiC power module for photovoltaic Power Conditioner System [ C]//2014 IEEE 26th International Symposium on Power Semiconductor Devices &lC's (ISPSD), 15-19 June, 2014, Waikoloa, USA: IEEE, 2014:342-345.
  • 4FILSECKER F, ALVAREZ R, BERNET S. Evaluation of 6.5- kV SiC PiN diodes in a medium-voltage, high-power 3L-NPCconverter [ J]. IEEE Transactions on Power Electronics, 2014, 29(10) : 5148 -5156.
  • 5WANG G, HUANG A Q, WANG F, et al. Static and dynamic perlbrmance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs [ C]//2015 IEEE 27th Inter- national Symposium on Power Semiconductor Devices & IC's (ISPSD) , 10-14 May, 2015, Hongkong, China: IEEE, 2015: 229 -232.
  • 6PALMOUR J W, CHENG L, PALA V, et al. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV[C]//2014 IEEE 26th International Symposium on Pow- er Semiconductor Devices & IC's ( ISPSD), 15-19 June, 2014, Waikoloa, USA: IEEE, 2014:79-82.
  • 7SONG X, HUANG A Q, LEE M, et al. 22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA [ C] //2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 10-14 May, 2015, Hongkong, China: IEEE, 2015:277-280.
  • 8Van BRUNT E, CHENG L, O'LOUGHLIN M Jet al. 27 kV, 20 A 4H-SiC n-IGBTs [ C]//Materials Science Forum, 2015, 821 - 823 : 847 - 850.
  • 9NIWA H, FENG G, SUDA J, et al. Breakdown characteristics of 12-20 kV-class 4H-SiC PiN diodes with improved junction termination structures [ C ] //2012 IEEE 24th International Sym- posium on Power Semiconductor Devices & IC' s (ISPSD) , 3-7 June, 2012, Bruges, Belgium: IEEE, 2012:381 -384.
  • 10黄润华,陶永洪,曹鹏飞,汪玲,陈刚,柏松,栗瑞,李赟,赵志飞.Development of 10 kV 4H-SiC JBS diode with FGR termination[J].Journal of Semiconductors,2014,35(7):56-59. 被引量:8

二级参考文献16

  • 1徐政,卢强.电力电子技术在电力系统中的应用[J].电工技术学报,2004,19(8):23-27. 被引量:49
  • 2Millatn J, Godignon P. Wide band-gap power semiconductor de- vices. Spanish Conference on Electron Devices (CDE), 2013: 293.
  • 3Jayant B B. Analysis of a high-voltage merged p-i-rdSchottky (MPS) rectifier. IEEE Electron Device Lett, 1987, 8(9): 407.
  • 4Zhao J H, Alexandrov P, Li X. Demonstration of the first 10- kV 4H-SiC Schottky barrier diodes. IEEE Electron Device Lett, 2003, 24(6): 402.
  • 5Imhoff E A, Hobart K D. High-current 10 kV SiC JBS rectifier performance. Mater Sci Forum, 2008, 600-603:943.
  • 6Nguyen D M, Huang R, Phung L V, et al. Edge termination de- sign improvements for 10 kV 4H-SiC bipolar diodes. Mater Sci Forum, 2013, 740-742:609.
  • 7Niwa H, Feng G, Suda J, et al. Breakdown characteristics of 12- 20 kV-class 4H-SiC PiN diodes with improved junction termina- tion structures. 24th International Symposium on Power Semi- conductor Devices and ICs (ISPSD), 2012:381.
  • 8Huang Runhua, Tao Yonghong, Chen Gang. Simulation, fabri- cation and characterization of 6500 V 4H-SiC JBS diode. Adv Mater Research, 2014, 846/847:737.
  • 9Tao Y H, Huang R H, Chen G, et al. 4.5 kV SiC JBS diodes. Appl Mechan Mater, 2013, 347-350:1506.
  • 10Li Y, Zhao Z F, Li Z H. Epitaxial growth of SiC epilayers for 10 kV Schottky diodes using chloride-based CVD. Adv Mater Research, 2014, 887/888:462.

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