摘要
抑制p型单晶硅太阳能电池的光致衰减现象是光伏科技领域的热点和难点。掺镓直拉硅单晶工艺的突破以及在晶硅电池上的应用破解了这一难题,成功地抑制光致衰减。因为镓原子与硼原子共价半径的差异以及在太阳能电池制备过程中单晶硅片仍会经历不同条件的热处理,所以探究不同热处理条件对掺镓单晶硅中缺陷以及少子寿命的影响是非常有必要的。本文使用专利工艺技术制备掺镓硅单晶,并对掺硼和掺镓两种不同单晶硅片进行不同温度和时间的退火实验,对比分析不同样品的氧含量和少子寿命。结果发现:退火温度的升高、时间的延长以及预热处理都会降低两种硅片中的间隙氧含量以及少子寿命,同时促进了两组硅片中氧沉淀的形成。通过两组不同硅片对比表明,在相同条件下的退火处理,原子半径差异导致掺镓硅单晶硅的间隙氧含量下降速度更快,易形成更多的氧沉淀。
The inhibition of light-induced degradation of p-type silicon solar cell was hot spot and difficulty in field of photovohaic technology. The breakthrough in gallium-doped Czochralski silicon technology and the application in crystalline silicon cells solved this problem, successfully suppressing the light-induced degradation. Because of the difference in radius between boron and gallium and different heat treatment conditions in solar cell manufacturing process, it was very necessary to explore the impact of different heat treat- ment conditions on interstital oxygen and minority carrier lifetime of gallium-doped silicon single crystal. The silicon single crystal doped with gallium was fabricated by patented technology, boron-doped and gallium-doped silicon wafers were heat-treated at different annealing temperatures and different time, and the interstitial oxygen content and the minority carrier lifetime of different samples were comparatively analyzed. The results showed that the interstitial oxygen content and the minority carrier lifetime decreased, but the pre- cipitation of oxygen increased when the annealing temperature rose and the time increased; the radius difference of gallium and boron caused the interstitial oxygen content of gallium-doped monocrystalline silicon to decrease faster and the precipitates of oxygen to form more easily than those of boron-doped silicon under the same annealing conditions.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2016年第6期626-632,共7页
Chinese Journal of Rare Metals
基金
国家科技部高技术研究发展计划(863计划)项目(2012AA05031)
河北省自然科学基金项目(F2012202090)资助
关键词
太阳电池
光衰减
少子寿命
退火
solar cell
light-induced degradation
minority lifetime
annealing
