摘要
利用微波等离子体化学气相沉积(MPCVD)法,在天然金刚石衬底的(111)晶面上同质外延生长单晶金刚石,研究了沉积温度、CH_4浓度以及小角度偏离(111)晶面的衬底对金刚石生长的影响。采用SEM和Raman对外延生长的金刚石进行表征,结果表明:高沉积温度、高CH_4浓度条件下,金刚石呈现出无序的多晶生长现象,随着沉积温度的降低,形貌和质量明显提高,在低沉积温度条件下金刚石表现出一致的单晶生长,但是表面形貌较为粗糙。进一步降低CH_4浓度可外延生长质量高、表面平整的单晶金刚石,速率达4.7μm/h.使用倾斜抛光方法将部分衬底面偏离(111)晶面约6°,对比实验发现,微小偏离(111)晶面的斜面衬底在高沉积温度、高CH_4浓度条件下也能生长出质量较好的单晶金刚石,生长速率明显提高,达到了9μm/h。
The diamond epitaxial layers were synthesized on（ 111） facet of natural diamond by microwave plasma chemical vapor deposition（ MPCVD）. The impact of the synthesis conditions,including the deposition temperature,CH4 concentration and tiltedcutting-angle,on the epitaxial growth was investigated with scanning electron microscopy and Raman spectroscopy. The results show that the deposition conditions significantly affect the diamond epitaxial growth. For example,polycrystalline diamond with high defect density and surface roughness formed at high temperatures and high CH4concentrations;and the epitaxial growth rate of the diamond layers,with fairly smooth and compact surfaces,could be 4. 7 μm / h at a low temperatures and a reduced CH4 concentration. The cutting-angle tilted 6° of the（111） facet of natural diamond was fund to markedly increase the epitaxial growth rate up to 9μm /h at a high temperature and a high CH4concentration
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2016年第5期524-528,共5页
Chinese Journal of Vacuum Science and Technology
基金
中国电子科技集团公司第四十六研究所创新基金(CJ20150701)
