摘要
采用操作简单的化学水浴法(CBD)在普通载玻片上制备了太阳能电池用缓冲层硫化镉薄膜。通过改变反应温度、溶液p H值和退火温度等实验条件,探讨了硫化镉薄膜的最佳制备工艺条件,并利用X射线衍射仪、紫外-可见-分光光度计和电化学工作站对生成的薄膜样品进行了表征。结果表明,制备均匀性好、致密、覆盖度好的硫化镉薄膜的最佳实验条件如下:反应温度为70℃,溶液p H值为10,且后续在350℃温度下进行热处理1 h。此条件下得到的硫化隔薄膜的可见光透过率较高,具有明显的光电导现象;通过计算,最优实验条件下获得薄膜的禁带宽度为2.3 5 e V,与理论值2.42 e V很接近。
The buffer layer of Cd S thin films for solar cells were prepared in the general load slides by a simple chemical bath deposition（CBD）. By changing the experimental conditions such as the p H value of the solution and the annealing temperature, the optimum preparation technology of Cd S thin film was discussed. The thin film samples were characterized by X- ray diffraction, UV- Vis spectrophotometer and electrochemical workstation. The experimental results showed that the best experimental conditions for the preparation of Cd S thin films with good uniformity, density and coverage were as the reaction temperature being 70 ℃, the solution p H value being 10 and the subsequent heat treatment at 350 ℃ being 1 hour. Under this condition, the visible light transmittance of the film was higher with obvious phenomenon of the visible light transmittance. By calculating, the band gap of the films was 2.35 e V which was very close to the theoretical value（2.42 e V）.
出处
《包装学报》
2016年第3期21-26,共6页
Packaging Journal
