摘要
功率半导体器件是逆变器中失效率最高的部分,计算功率器件的损耗与结温对预测功率器件的寿命具有重要意义。分别从损耗计算和热路计算两个方面简述了逆变器中绝缘栅双极型晶体管(IGBT)功率模块及其反并联二极管的电热模型的计算原理,并搭建了该电热联合仿真模型,进而得到IGBT与反并联二极管的损耗波形与结温波形。将仿真得到的结果与利用电力电子仿真软件PLECS中自带的IGBT模块搭建的逆变器的仿真结果对比,验证了该模型的合理性与准确性,并大大缩短了仿真时间。将在某风电场中获得的逆变器输出电流输入仿真模型中,得到IGBT的结温曲线,可以为IGBT寿命预测等研究提供数据支持。
Power semiconductor devices have the highest failure rate in inverters. Compute power loss and junction temperature of the devices have great significance to predict the life of the power device. The calculation principles of the electro-thermal modules of insulated gate bipolar transistor （IGBT） power module and the parallel diode in inverter were introduced by loss and thermal calculation, respectively. The electro-thermal simulation module was set up to get the loss waveform and junction temperature wave- form of IGBT and parallel diode. The results of the electro-thermal simulation model was compared with the results of the inverter simulation model by IGBT module in PELCS software. The rationality and the accuracy of the electro-thermal model were verified, and the simulation time was shortened. In addition, put the output current of inverter obtained from a wind farm to the electro-thermal model which can get the IGBT junction temperature curve which can provide data support for the research of IGBT life prediction.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第6期440-445,472,共7页
Semiconductor Technology
基金
国家自然科学基金资助项目(51377044)
2012年度高校博士点专项科研基金资助项目(20121317110008)
关键词
电热联合
仿真
绝缘栅双极型晶体管(IGBT)
损耗
结温
elector-thermal
simulation
insulated gate bipolar transistor （IGBT）
loss
junction temperature
