摘要
With the insight of memristor researsh growing continuously,many semiconductor material has been manufactured to various kinds of memristive device.Yet the stabilization of memristive performance haven’t been fulfilled,the fathom of memristive-acting mechanism still not being generalized.To put a futher move on low-consuming and high-stable memristive conductance device,we built a high stable double-pair-electrode device,based on the fabrication of TiO_(2-x),which has been generally applied as a n-type semiconductor.Under the constant-repeating cyclic voltammerty;we nailed the memristive quality of our mental/semiconductor thin film device.Moreover,through multifarious analytical processes based on our doping,filming growing path,we build a rational model for our memristor‘s memristive conductance mechanism,which indicated the carrier motion and electron tunnel following the biasing voltage.Our work exhibited a new type of TiO_(2-x)-based memristor,and emerged a new way to explicate the single-stage-switching memristive feature,which might initiate a new guiding ideology in semiconductor memristor’s studying.
With the insight of memristor researsh growing continuously,many semiconductor material has been manufactured to various kinds of memristive device.Yet the stabilization of memristive performance haven＇t been fulfilled,the fathom of memristive-acting mechanism still not being generalized.To put a futher move on low-consuming and high-stable memristive conductance device,we built a high stable double-pair-electrode device,based on the fabrication of TiO_（2-x）,which has been generally applied as a n-type semiconductor.Under the constant-repeating cyclic voltammerty;we nailed the memristive quality of our mental/semiconductor thin film device.Moreover,through multifarious analytical processes based on our doping,filming growing path,we build a rational model for our memristor＇s memristive conductance mechanism,which indicated the carrier motion and electron tunnel following the biasing voltage.Our work exhibited a new type of TiO_（2-x）-based memristor,and emerged a new way to explicate the single-stage-switching memristive feature,which might initiate a new guiding ideology in semiconductor memristor＇s studying.
出处
《科技视界》
2016年第20期226-229,共4页
Science & Technology Vision
