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Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm

Influence of surface scattering on the thermal properties of spatially confined GaN nanofilm
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摘要 Gallium nitride(GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation(BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering. Gallium nitride(GaN), the notable representative of third generation semiconductors, has been widely applied to optoelectronic and microelectronic devices due to its excellent physical and chemical properties. In this paper, we investigate the surface scattering effect on the thermal properties of GaN nanofilms. The contribution of surface scattering to phonon transport is involved in solving a Boltzmann transport equation(BTE). The confined phonon properties of GaN nanofilms are calculated based on the elastic model. The theoretical results show that the surface scattering effect can modify the cross-plane phonon thermal conductivity of GaN nanostructures completely, resulting in the significant change of size effect on the conductivity in GaN nanofilm. Compared with the quantum confinement effect, the surface scattering leads to the order-of-magnitude reduction of the cross-plane thermal conductivity in GaN nanofilm. This work could be helpful for controlling the thermal properties of Ga N nanostructures in nanoelectronic devices through surface engineering.
作者 侯阳 朱林利
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第8期301-307,共7页 中国物理B(英文版)
基金 supported by the National Natural Science Foundation of China(Grant Nos.11302189 and 11321202) the Doctoral Fund of Ministry of Education of China(Grant No.20130101120175)
关键词 GaN nanofilm elastic model quantum confinement Boltzmann transport equation size effect phonon thermal conductivity GaN nanofilm, elastic model, quantum confinement, Boltzmann transport equation, size effect,phonon thermal conductivity
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