摘要
InAs/GaSbⅡ类超晶格被认为制备第三代高性能红外探测器的优选材料。本文对GaSb衬底上分子束外延生长的Ⅱ类超晶格材料缺陷进行了研究,首先对材料表面缺陷分类,然后分析了各类缺陷的起源,并研究了生长温度、GaSb生长速率、As/In束流比等对超晶格表面缺陷的影响,对制备高性能大面阵探测器的Ⅱ类超晶格材料生长具有参考价值。
Type Ⅱ InAs/GaSb superlattices have the characteristics of adjustable band gap,high quantum efficiency,low dark current,easy fabrication for large array,etc,so it is the main material for the third generation infrared detectors. Type Ⅱ InAs/GaSb superlattices was grown by MBE on GaSb substrate,and the defects of material surface were classified and its causes were analyzed. The influences of growth temperature,growth rate of GaSb,As/In ratio on defects were studied. Through the optimization of growth conditions,high quality type Ⅱ InAs/GaSb superlattices were obtained,which has a certain reference for the fabrication of high quality large format type Ⅱ InAs/GaSb superlattices infrared detectors.
出处
《激光与红外》
CAS
CSCD
北大核心
2016年第9期1106-1109,共4页
Laser & Infrared
关键词
Ⅱ类超晶格
分子束外延
缺陷
起源
type Ⅱ superlattices
molecular beam epitaxy
defects
origin
