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GaN功率器件及其应用现状与发展 被引量：8

Development and Application of Gallium Nitride Power Devices
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摘要 电力电子器件是电力电子技术的重要基础。现有硅基电力电子器件的性能已经逼近其材料极限,很难再大幅提升硅基电力电子装置的性能。以氮化镓为代表的宽禁带半导体器件比硅器件具有更优的器件性能,成为电力电子器件的研究热点。介绍了氮化镓电力电子器件的商业化产品水平和实验室研究现状,阐述了其在典型场合中的应用,并剖析了其发展中存在的挑战。 Power electronic devices are an important basis for power electronic technology. After a long period of development, silicon based power devices exhibit unavoidable physical limi-tations in improving performance of silicon based power converters. On the other hand, gallium nitride based devices have better performance due to their outstanding properties, and become a new trend in developing power electronic devices. This paper presents reviews the recent progres-ses in the commercial and experimental developments of gallium nitride based power semiconduc-tor devices, and their applications. Moreover, a forecast of applications of wide-bandgap power semiconductor in the future power electronic device market is given.
作者 秦海鸿 董耀文 张英 徐华娟 付大丰 严仰光
机构地区 南京航空航天大学自动化学院
出处 《上海电机学院学报》 2016年第4期187-196,215,共11页 Journal of Shanghai Dianji University
基金 教育部博士点基金资助项目资助(20123218120017) 中央高校基本科研业务费专项资金项目资助(NS2015039 NJ20160047) 江苏高校优势学科建设工程项目资助
关键词 宽禁带半导体器件 氮化镓 电力电子技术 现状 发展 wide-bandgap semiconductor device gallium nitride （GaN） power electronic technology present situation development
分类号 TN386 [电子电信—物理电子学]
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参考文献29

  • 1WEIMER J A.The role of electric machines and drives in the more electric aircraft[C]∥IEEE International Electric Machines and Drives Conference.[S.L.]:IEEE,2003:11-15.
  • 2CHINTHAVALI M,TOLBERT L M,ZHANG H,et al.High power SiC modules for HEVs and PHEVs[C]∥2010International Power Electronics Conference.Sapporo:IEEE,2010:1842-1848.
  • 3李迪,贾利芳,何志,樊中朝,王晓东,杨富华.GaN基SBD功率器件研究进展[J].微纳电子技术,2014,51(5):277-285. 被引量：6
  • 4ALQUIER D,CAYREL F,MENARD O,et al.Recent progress in GaN power rectifiers[J].Japanese Journal of Applied Physics,2012,51(1):42-45.
  • 5DISNEY D,NIE Hui,EDWARDS A,et al.Vertical power diodes in bulk GaN[C]∥25th International Symposium on Power Semiconductor Devices&ICs.Kanazawa:IEEE,2013:59-62.
  • 6KIZILYALLI I C,EDWARDS A P,NIE Hui,et al.3.7 kV vertical GaN PN diodes[J].IEEE Electron Device Letters,2014,35(2):247-249.
  • 7KIZILYALLI I C,EDWARDS A P,AKTAS O,et al.Vertical power p-n diodes based on bulk GaN[J].IEEE Transactions on Electron Devices,2015,62(2):414-422.
  • 8MILLAN J,GODIGNON P,PERPINA X,et al.A survey of wide bandgap power semiconductor devices[J].IEEE Transactions on Power Electronics,2014,29(5):2155-2163.
  • 9DAUMILLER I,KUNZE M.Normally-on HEMT switch 600V-170mΩ:MGG1T0617D[EB/OL].(2012-03-01)[2016-04-20].http:∥www.microgan.com/includes/products.
  • 10LIDOW A,STRYDOM J.Gallium nitride technology overview[EB/OL].(2012-01-01)[2016-04-20].http:∥epc-co.com/epc/DesignSupport/WhitePapers.aspx.

二级参考文献93

  • 1MANABU Y,YASUHIRO U,TETSUZO U,et al.Recent advances in GaN transistors for future emerging applications[J].Phys Stat Sol (a),2009,206(6):1221-1227.
  • 2NARIAKI I,KAZUO K,KAZUO K,et al.Over 55 A,800 V high power AlGaN/GaN HFETs for power switching application[J].Phys Star Sol (a),2007,204 (6):2028-2031.
  • 3ZHANG M L.Undoped high breakdown voltage AlGaN/GaN HEMT on sapphire substrate[J].Microelectronics Journal (to be published).
  • 4NOMURA T,MASUDA M,IKEDA N,et al.Switching characteristics of GaN HFETs in a half bridge package for high temperature applications[J].IEEE Trans on Power Electron,2008,23 (2):692-697.
  • 5WU Y F,MATT J M,MOORE M L.et al.A 97.8% efficient GaN HEMT boost converter with 300 W output power at 1 MHz[J].IEEE EDL,2008,29(8):824-826.
  • 6YOUNG C C,MILAN P,CHA H Y,et al.The effect of an Fedoped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate[J].IEEE Trans on ED,2006,53(12):2926-2931.
  • 7KATO S,SATOH Y,SASAKI H,et al.C-dopod GaN buffer layers with high breakdown voltages for high power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE[J].J Cryst Growth,2007,298:831-834.
  • 8IKEDA N,KAYA S,LI J,et al.High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse[C] //Proc of the 20th ISPSD.Orlando,Forida,USA,2008:287-290.
  • 9IKEDA N,KAYA S,LI J,et al.High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates[C] //Proc of the 21th ISPSD.Barcelona,Spain,2009:251-254.
  • 10SELVARAJ S L,SUZUE T,EGAWA T,et al.Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers[J].IEEE EDL,2009,30 (6):587-589.

共引文献9

同被引文献43

引证文献8

二级引证文献18

上海电机学院学报
2016年 第4期

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