摘要
将温度效应考虑在内,建立了一对填充多壁碳纳米管的硅过孔阻抗模型,利用该模型计算了一对硅过孔的正向传输系数S21、串扰及延时等物理量,并分析了这些物理量随温度、TSV(Through Silicon Via)结构及材料参数的变化。结果表明,衬底电导的温度效应是影响S21参数温度特性的主要原因;降低隔离层介电常数或增加隔离层厚度,可以减小插入损耗,降低串扰和延时,提升传输性能;适当增加节距可以减小60GHz频率以下的插入损耗;增加MWCNT(Multi-walled Carbon Nanotubes)最外层直径能够提升TSV等效电导率,但对减少插损效果甚微。
The model of a pair of through-silicon vias filled with multi-walled carbon nanotubes （MWCNT-T SV ） is constructed with consideration of temperature effe ct The forward transmission coefficient S21 , crosstalk and time delay are calculated. The impacts of geometrical and material parameters on them are also analyzed. The re su lts show that the temperature effect of sub-strate conductance is the major factor that affects the temperature characteristic of MWCNT-T SV . A thicker isolation la y e r or materials with a smaller permittivity is helpful to reduce the insertion lo s s, crosstalk and time d e la y , and can improve the tran s-mission performance of TSV consequently. In addition, increasing the pitch between T SV s appropriately can reduce the insertion loss at frequencies lower than 60 GHz. A la rg er outermost diameter of MWCNT w il l re su lt in a higher effective conductance. However, the impact of the diameter on insertion loss is tinny.
出处
《中国科技论文》
CAS
北大核心
2016年第14期1632-1636,共5页
China Sciencepaper
基金
国家自然科学基金资助项目(61271160)
高等学校博士学科点专项科研基金资助项目(20121401110009)
山西省自然科学青年基金资助项目(2014021021-1)
关键词
微电子学与固体电子学
多壁碳纳米管
硅过孔
正向传输系数
串扰
延时
microelectronics and solid-state electronics
multi-walled carbon nano tu b es
through-silicon v ia
forward transmission coefficient
crosstalk
time delay
