摘要
采用坩埚下降法生长了Dy^(3+)掺杂浓度分别为0.1mol%、0.2mol%、0.3mol%、2mol%、3mol%和4mol%的Bi_4Si_3O_(12)(BSO)晶体。发现高浓度(2mol%以上)掺杂能够显著改变BSO晶体的析晶行为,晶体表面析出物完全消失,顶部呈现光滑结晶面;低浓度(低于0.3mol%)掺杂能够显著提高晶体的光输出,最高可达纯BSO的145%。晶体热释光谱测试结果表明:少量Dy^(3+)掺杂虽然热释光峰略有增强,但有利于晶体光产额的提高;高浓度掺杂则容易引起晶格畸变,甚至产生新的缺陷,降低晶体的光产额。
Dy^3＋ doped Bi4Si3012 （BSO） crystals were grown by the vertical Bridgman method with doping contents of 0. lmol%, 0.2mo1%, 0.3mo1%, 2mo1%, 3mo1% and 4 tool%. It was found that the crystallization behavior was modified by heavy doping and the surface precipitated phase disappeared gradually with the dopant content increase. The maximum light yield of the BSO crystals doped with 0. l mol% Dy^3＋ was up to 145% of that of pure BSO. The thermo-luminescence （TL） spectra showed that the intensity of TL peaks increased slightly and Dy^3＋ doping is helpful to light yield when doping content is less than 0.3mo1%. However, it induced more defects when the dopant content was larger than 2mo1%. High doping may lead to competitive luminescence between Dy^3＋ ions and Bi^3＋ ions, resulting in decrease of light yield.
作者
汪美玲
徐家跃
张彦
储耀卿
杨波波
申慧
田甜
WANG Mei-Ling XU Jia-Yue ZHANG Yan CHU Yao-Qing YANG Bo-Bo SHEN I-Iui TIAN Tian(School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2016年第10期1068-1072,共5页
Journal of Inorganic Materials
基金
国家自然科学基金(51342007
51572175)~~
关键词
硅酸铋
晶体生长
Dy3+掺杂
热释光
光产额
Bi4Si3Ot2
crystal growth
Dy3＋ doping
thermoluminescence
light yield
