摘要
发光二极管(LED)的频率响应特性以及在大电流下的发光特性是其在可见光通信中应用的关键性能指标。对于GaN基的LED,减小InGaN/GaN多量子阱中的内建电场,增大空穴的注入,能有效提高大电流下的内量子效率,减弱在大电流情况下出现的效率下降。通过降低与结电容效应相关的RC时间常数以及载流子自发辐射复合寿命,可改善LED的频率响应特性,进一步提高LED的调制带宽。
The latest progress in design and fabrication of the GaN-based light emitting diodes used in visible light communication was tentatively discussed. Recently, extensive research efforts centered on the possible solutions of the two key limitations in development of light fidelity technology： one is the narrow modulation band-width, the other is the so-called ＂Efficiency Droop. ＂The discussions focused on： i） the mechanismsresponsible for efficiency- droop and the solutions, including the optimization of the synthesis conditions and structures of the InGaN/GaN mul- tiquantum-wells to effectively reduce the built-in field at the interface and to increase the hole-injection and internal quantum efficiencies at a large current ; ii） possible measures to improve the modulation bandwidth of LEDs ： such as the reduction of RC time constantinduced by junction capacitance and the decrease the spontaneous recombina- tion lifetime. The development trends of GaN-based LED were also briefly discussed in a thought provoking way.
作者
黄昕乾
姚若河
Huang Xinqian Yao Ruohe(School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2016年第10期1136-1143,共8页
Chinese Journal of Vacuum Science and Technology
基金
广东省重大科技专项(2014B010119002)
关键词
发光二极管
频率响应
效率下降
可见光通信
Light emission diodes, Frequency response, Efficiency droop, Visible light communication
