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(Pb,La)TiO_3薄膜的结构与性能 被引量:2

Structures and properties of (Pb,La)TiO_3 thin films
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摘要 采用溶胶-凝胶技术在La Ni O3/Si衬底上制备不同退火温度(450、500、550℃)、不同La掺量的Pb1-xLaxTi O3(x=0、5%、7.5%、10%)铁电薄膜,利用X射线衍射法对产物进行表征,研究退火温度和La掺量对薄膜性能的影响。结果表明,掺加La有助于Pb Ti O3薄膜的(100)晶面衍射峰增长,随温度升高,薄膜的晶化程度变好,剩余极化强度稍有减小,矫顽电场强度减小,漏电电流密度减小,且介电常数增大;退火温度为550℃时,Pb0.925La0.075Ti O3薄膜的剩余极化强度为35μC/cm2,矫顽电场强度为147 k V/cm,漏电电流密度为10-8A/cm2,介电常数值为487(100 k Hz)。 Pb1-xLaxTiO3 (x = 0,5% ,7.5% and 10% ) ferroelectric thin films on LaNiO3/Si substrates were prepared by solgel method, annealed at different temperatures (450,500,550 ℃ ), and the effects of annealing temperature and lanthanum doping on their properties were studied using X-ray diffraction method. The results indicate that La-doping is an effective way to increase the (100) diffraction peak of PbTiO3 thin films. With the rise of temperature, the crystallization of the films improves, the remnant polarization slightly reduces,the coercive field and the leakage current density decrease, and the dielectric constant increases. Pb0.925 La0.075 TiO3 thin film annealed at 550 ℃ exhibits the best properties with the remnant polarization of 35 IxC/cm^2 , the coercive field of 147 kV/cm, the leakage current density of about 10-s A/cm^2 ,and the dielectric constant of 487 at 100 kHz.
作者 郭圣洁 胡广达 杨长红 GUO Shengjie HU Guangda YANG Changhong(School of Material Science and Engineering, University of Jinan, Jinan 250022, Chin)
出处 《济南大学学报(自然科学版)》 CAS 北大核心 2016年第6期462-466,共5页 Journal of University of Jinan(Science and Technology)
基金 国家自然科学基金项目(51172094 51372100)
关键词 溶胶-凝胶法 钛酸铅 铁电薄膜 掺杂 sol - gel method lead titanate ferroelectric thin film doping
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