摘要
通过激光二极管速率方程模拟得出了优化芯片高频性能的基本途径,权衡直流特性和实际生产过程,对腔面反射率、腔长和量子阱结构进行了优化。建立激光二极管小信号等效电路模型,对芯片寄生网络进行了优化。测试了25-125℃下芯片的P-I特性,25℃时芯片的阈值电流仅为7.4 m A;芯片温度为25-45℃时,特征温度为102 K;芯片温度为105-125℃时,特征温度为57 K。在25和85℃时,激光二极管在直流偏置30 m A的3 d B频带响应分别为12.8和10.4 GHz。芯片被封装为光发射次模块（TOSA）后,-40,25和85℃下的眼图均满足10 Gbit/s光通信系统的应用要求。
The basic way to optimize the high-frequency performance of the chip was obtained by the simulation of laser diode rate equations. Considering the direct current characteristics and actual fabrication process,the cavity facet reflectivity ratio,cavity length and quantum well structure were optimized. The laser diode small-signal equivalent circuit model was established to optimize the parasitic network of the laser diode chip. The P-I characteristics of the chip at 25- 125 ℃ were measured,and the threshold current of the chip under 25 ℃ is only 7. 4 m A. When the chip temperature is from 25 ℃ to45 ℃,the characteristic temperature is 102 K. When the chip temperature is from 105 ℃ to 125 ℃,the characteristic temperature is 57 K. At 25 and 85 ℃ the 3 d B band responses of the laser diode chip are 12. 8 GHz and 10. 4 GHz with the bias current of 30 m A,respectively. The eye diagrams of the chip at- 40,25 and 85 ℃ can satisfy the application demand of 10 Gbit / s optical communication system after the chip is packaged into a transmitter optical subassembly（ TOSA）.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第11期827-830,874,共5页
Semiconductor Technology
