摘要
电流、电压、电荷和磁通是电路中的4个基本物理量,由此构成了包含忆阻器在内的4种基本元件。然而,最近文献提出,磁通和电荷是一对基本物理量,生成了以忆阻器、忆感器和忆容器引领的3类基本元件。以电阻-忆阻串联电路和忆阻蔡氏电路为例,基于磁通和电荷物理量,提出了忆阻电路的韦库模型,开展了相应的数学建模,并与伏安模型进行了比较分析。结果表明:采用伏安模型,忆阻是动态元件,导致电路的阶数增加;而采用韦库模型,忆阻是非动态元件,使得电路的阶数维持不变,有利于开展复杂忆阻电路的动力学特性分析。
In the electric circuits,current,voltage,charge and magnetic flux are four basic physical attributes,from which four fundamental circuit elements including memristor are constituted.However,it is recently proposed that magnetic flux and charge are a pair of basic physical attributes and generate three basic element classes leaded by memristor,memcapacitor and meminductor,respectively.Taking resistormemristor series circuit and memristive Chua＇s circuit as examples,the flux-charge models of memristive circuits are proposed using physical attributes of magnetic flux and charge,the corresponding mathematical models are established and the comparative analyses with the voltage-current models are performed.The results indicate that when the voltage-current model is used,memristor is a dynamic element,resulting in the circuit order to increase;while when the flux-charge model is utilized,memristor is a nondynamic element,implying the circuit order to maintain,which facilitate the analysis of dynamical characteristics in complex memristive circuits.
出处
《常州大学学报（自然科学版）》
CAS
2016年第6期104-107,共4页
Journal of Changzhou University：Natural Science Edition
基金
国家自然科学基金资助项目(51277017)
江苏省高校自然科学研究面上项目(15KJB510001)
关键词
忆阻器
电路元件
韦库关系
忆阻电路
memristor
circuit element
flux-charge relation
memristive circuit
