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基于UV光照射在硅片表面活化的阳极键合工艺研究 被引量:4

Research on Anodic Bonding Process Based on UV Light Irradiation on the Surface of Silicon Wafer
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摘要 为了减少阳极键合试验时Si片和Pyrex玻璃片的键合困难,提高硅片表面活性和键合质量,在阳极键合的表面预处理工艺中引进UV光对硅片的活化并对其工艺参数和效果进行评估。基于阳极键合实验的基本流程,采用对比实验,探究UV光对硅片的照射与否,以及对硅片照射的时间长短对硅片表面的影响,并利用大恒图像系列数字摄像机、单轴拉伸测试仪分别对UV光照射前后硅片的活化效果和键合强度进行了测试与表征。结果表明经过该UV光源适当4 min时间照射的硅片,其表面的亲水键合活化能得到很大提高,可以显著地改善键合片的表面状况。验证了该工艺在阳极键合的预处理方法上的可行性和有效性。 In order to reduce the difficult of anodic bonding experiment when Si and Pyrex glass bonding to improve the quality of silicon wafer surface activity and bonding,the UV activation of silicon wafers was employed in the surface pretreatment process of anodic bonding and its technical parameters and effect were evaluate. Based on the basic process of anodic bonding experiment,the contrast experiment was used to explore the irradiation of UV light on it or not and the length of time as well as to the silicon irradiation effects on the surface of silicon wafer. The image series digital camera and the uniaxial tensile tester of silicon wafers were used to exam the activation effect after UV irradiation and teste the bonding strength. Results show that after the UV light source appropriate 4 min time exposure of silicon wafers,the hydrophilic bonding on the surface of the activation energy was greatly improved and the bonding surface condition was also significantly improved. Therefore the pretreatment method of this technology in the anodic bonding is feasible and effective.
作者 李星 陈立国 王阳俊 LI Xing CHEN Li-guo WANG Yang-jun(Robotics and Microsystems Center, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215021, P. R. China)
出处 《科学技术与工程》 北大核心 2017年第2期203-207,共5页 Science Technology and Engineering
基金 高等学校博士学科点专项科研基金(20133201130003) 苏州市产业技术创新专项资金(SYG201540) 国家重大科学仪器设备开发专项资金(2013YQ470767)资助
关键词 阳极键合 UV光照射 亲水性 键合强度 anodic bonding UV light irradiation hydrophilic bonding strength
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  • 1秦会峰,孟庆森,宋永刚,胡利方,张惠轩.硼硅玻璃与硅阳极键合界面形成机理分析[J].功能材料,2006,37(9):1369-1371. 被引量:6
  • 2张正元,徐世六,冯建,胡明雨.基于带图形的硅衬底上制备硅薄膜的技术[J].传感技术学报,2006,19(05A):1401-1403. 被引量:4
  • 3王玉传,朱大鹏,许薇,罗乐.圆片级气密封装及通孔垂直互连研究[J].功能材料与器件学报,2006,12(6):469-473. 被引量:3
  • 4格雷戈里T A科瓦奇.微传感器与微执行器全书[M].张文栋,等译.科学出版社.2003:456-458.
  • 5Wallis G D,Pomerantz D I.Field assisted glass-metal sealing[J].J App Phys,1969,40:3946-3948.
  • 6Schjolberg-Henriksen K,Hanneborg A B.Jensen G U.Anodic bonding and the integration with electronics[J].Electrochemical Society Proceedings,2003,19:278-288.
  • 7Fleron R W,Jensen F.Sealing of cavities with lateral feedthroughs by anodic bonding[J].Electrochemical Society Proceedings,2006,19:337-346.
  • 8Despont M,Gross H.Fabrication of a silicon-pyrex-silicon stack by a.C.anodic bonding[J].Sensors and Actuators A,1996,55:219-224.
  • 9Xing Q F,Yoshida M,Sasaki G.TEM study of the interface of anodic bonded Si/glass[J].Scripta Materialia,2002,47:577-582.
  • 10Kreissig U,Grigull S,Lange K.In situ ERDA studies of ion drift processes during anodic bonding of alkali-borosilicate glass to metal[J].Nuclear Instruments and Methods in Physics Research B,1998,136-138:674-679.

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