摘要
传统RCD动态均压电路是以牺牲MOSFET快速性为代价来换取动态电压均衡,无法满足某些快速性响应要求较高的场合。鉴于此,在传统RCD电路基础上,采用一种新型宽禁带半导体器件SiC MOSFET,提出一种改进的新型动态均压电路。创造性地提出双重均压反馈机制,一方面利用瞬态电压抑制二极管(TVS)箝位电路代替大电容恒压源,有效提高开关速度,抑制动态不均压;另一方面通过米勒效应抑制漏源极电压斜率的变化率,不仅能进一步改善均压效果,还可降低开关损耗,获得较为理想的高压脉冲。最后通过仿真和实验,验证了该电路不仅动态均压效果好,且开关速度可达纳秒级,在实际应用中具有相当可观的实用价值。
The traditional RCD dynamic voltage balancing circuit is in exchange for the dynamic voltage balance at the expense of the fast MOSFET,which can not he satisfied for some high speed response requirements.In view of this, based on the traditional RCD circuit, a new type of wide band gap semiconductor device SiC MOSFET is adopted,and an improved dynamic voltage sharing circuit is proposed.Dual feedback mechanism is proposed creatively.It can effectively improve the switching speed and suppress the dynamic pressure imbalance by using the transient volt- age suppressom（TVS） clamp circuit instead of the large capacitance constant voltage source.While,the Miller effect changes the drain source voltage slope inhibition rate, not only to further improve the equalizing effect, but also can reduce switching loss, so the ideal high voltage pulse is obtained.Finally, the consistency of simulation and experiment is simulated,it is proved that the circuit has a good dynamic voltage sharing effect,and the switching speed can reach the nanosecond level, which has considerable practical value in practical application.
出处
《电力电子技术》
CSCD
北大核心
2017年第2期121-124,共4页
Power Electronics
基金
国家重大科学仪器设备开发专项项目(2011YQ050069)~~
关键词
高压脉冲发生器
均压电路
双重均压反馈机制
high voltage pulse generator
voltage sharing circuit
dual feedback mechanism
