摘要
采用磁控溅射法在PLZST陶瓷衬底上制备了不同厚度的LSMO薄膜,并对其微结构、磁性能及电输运特性进行了研究。结果表明,LSMO薄膜具有单一钙钛矿结构,晶粒均匀,表面平整,其中20 nm厚LSMO薄膜粗糙度仅为2.93 nm。在10~300 K温度范围内,LSMO薄膜均具有大的磁电阻效应,20 nm厚的LSMO薄膜磁电阻温度稳定性优异。随着薄膜厚度的增加,薄膜的居里温度、金属绝缘体转变温度、磁化强度和导电性能降低。这可能是由于Pb、Sn、Zr等离子扩散进入LSMO薄膜中,导致MnO 6八面体畸变造成的。
La0.7Sr0.3MnO3 （LSMO） thin films with different thicknesses were deposited on （Pb0.97La0.02） （Zr0.58Sn0.3025Ti0.1175）O3 （PLZST） ceramics by RF magnetron sputtering, and their microstructure, magnetic and electri- cal transport properties were investigated. Microscopy observations show that LSMO thin films are perovskite struc- ture without obvious impurity phase. All the LSMO thin films display smooth surface with uniform, and roughness is as low as 2.93 nm for LSMO thin films at the thickness of 20 nm. Furthermore, large magnetoresistance （MR） effect was observed in LSMO thin films in a broad temperature range of 10-300 K. Particularly the MR of LSMO thin films with 20 nm in thickness exhibits excellent temperature stability. Moreover, the Curie temperature, metal-insulator tran- sition temperature, saturation magnetization and electrical conductivity decrease as the film thickness increases, which is attributed to the diffusion ofPb, Sn, Zr, etc. in the samples, resulting in the distortion ofMnO6 octahedron.
作者
肖玲
陈莹
刘振
王根水
温志渝
董显林
XIAO Ling CHEN Ying LIU Zhen WANG Gen-Shui WEN Zhi-Yu DONG Xian-Lin(CAS Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Micro-system Center, Chongqing University, Chongqing 400030, China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2017年第3期326-330,共5页
Journal of Inorganic Materials
基金
National Natural Science Foundation of China(51302295,61371059)
Natural Science Foundation of Shanghai(13ZR1445600)
Visiting Scholar Foundation of Key Discipline Laboratory of New Micro/Nano Device and System Technology in Chongqing University(2014MS05)
关键词
LSMO薄膜
PLZST陶瓷
磁电阻
扩散
La0.7Sr0.3MnO3 thin films
PLZST ceramics
magnetoresistance
diffusion
