摘要
用溶胶-凝胶法制备SnO_2:P透明导电薄膜;探讨P掺杂量、热处理温度、镀膜次数等的对薄膜结构和光电性能的影响。结果表明:SnO_2:P薄膜保持四方金红石结构,随着P掺杂量、热处理温度和镀膜次数的增加,方块电阻先下降后上升;提高热处理温度,可以提高薄膜平整度和致密度;采用提拉法在P/Sn摩尔比为2%时,热处理温度为450℃,镀膜次数为14次时,SnO_2:P薄膜性能最佳,方块电阻为8.9 KΩ/□,可见光平均透过率约为95%;采用旋涂法在P/Sn摩尔比为2%时,热处理温度为450℃,镀膜次数为6次时,方块电阻为4.3 KΩ/□;在相同条件下,采用提拉法制备薄膜光透过率明显高于旋涂法。
SnO2 ： P transparent conductive film was prepared by sol-gel process. The influence of P doping amount, annealing temperature and coating times on structure and photoelectric property of films was studied. The results show that SnO2 ： P thin film was maintained rutile structure. The square resistance decreases firstly and then increases when P doping amount, annealing temperature and coating times increase. The films are smooth and compact when annealing temperature increases . The square resistance of SnO2 ： P films by the spin coating method is 8.9 KΩ/□ and the visible light transmittance is 95% when the P/Sn molar ratio is 2% , the annealing temperature of 450 ℃ and the coating times is 14. The square resistance of SnO2 ： P film by the spin coating method is 4.3 KΩ/□ when the P/Sn molar ratio is 2%, the heated temperature is 450 ℃ and the coating times is 14. Under the same conditions, the visible light transmittance of the thin film prepared by czochralski coating is significantly higher than that prepared by spin coating method.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2017年第3期33-38,共6页
China Ceramics
基金
溧阳市科技项目资助(LA2015001)
2016江苏省大学生创新计划项目资助(201610299065Y)
