摘要
作为宽禁带半导体器件,GaN基肖特基势垒二极管(SBD)有耐高压、耐高温、导通电阻小等优良特性,这使得它在电力电子等领域有广泛应用。本文首先综述了SBD发展要解决的问题;然后,介绍了GaN SBD结构、工作原理及结构优化研究进展;接下来,总结了AlGaN/GaN SBD结构、工作原理及结构优化研究进展,并着重从AlGaN/GaN SBD的外延片结构、肖特基电极结构以及边缘终端结构等角度,阐述了这些结构的优化对AlGaN/GaN SBD性能的影响;最后,对器件进一步的发展方向进行了展望。
As a wide band gap semiconductor device, GaN based Schottky barrier diode （SBD） has the characteristics of high voltage, high thermostability, low conduction resistance and other excellent characteristics, which makes it widely used in the field of power electronics. This paper first summarizes the problems to be solved in the development of SBD. Then, the structure, working principle and structure optimization of GaN SBD are introduced. Next, the structure, working principle and structure optimization of AlGaN/GaN SBD are summarized, and the effects of these structures on the performance of AlGaN/GaN SBDs are discussed from the perspective of epitaxial wafer structure, Schottky electrode structure and edge termination structure of AlGaN/GaN SBD.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2017年第4期477-486,共10页
Chinese Journal of Luminescence
基金
国家高技术研究发展计划(863)(2015AA033305)
北京16教师队伍建设-青年拔尖项目(市级)(PXM2016_014204_000017_00205938_FCG)资助~~
