摘要
对MTM反熔丝单元的总剂量辐照特性进行了研究,对未编程和编程后两种状态的反熔丝单元在不同电压偏置条件下进行总剂量辐照(Co^(60)-γ射线),辐照总剂量为2 Mrad(Si)。辐照试验结果显示,未编程状态下的MTM反熔丝单元的电压-电流特性曲线基本保持不变,漏电流变化率小于10%。编程后反熔丝单元的电阻特性保持不变,并且编程电阻大小对辐照试验结果无显著影响。试验结果表明,MTM反熔丝单元的抗总剂量(Co^(60)-γ射线)辐照能力达到2 Mrad(Si)以上。
The paper studies the TID effect of MTM antifuse cell. Different voltage bias are applied on theun-programmed and programmed MTM antifuse cells in the TID environment with total ion dose up to 2Mrad （Si）. The experiment result shows that TID radiation has no marked effect on the unprogrammedantifuse. The I-V curve remains stable with leakage current change rate less than 10%. The resistance value ofprogrammed antifuse remains unchanged. TID radiation＇s influence on the different resistance value is notnoticeable. The TID irradiation of MTM anti-fuse cell reaches 2 Mrad （Si）.
出处
《电子与封装》
2017年第4期34-38,共5页
Electronics & Packaging
