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盒栅式电子倍增器模拟计算 被引量:5

Numerical Simulation of Characteristics of Box Type Electron Multiplier
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摘要 采用三维电磁分析软件CST对盒栅式电子倍增器结构进行建模,利用控制变量的分析方法修改模型参数,模拟计算了不同打拿极栅网结构参数和出射电子能量条件下电子倍增器内部的电场分布、电子运动轨迹以及倍增器增益。研究分析了打拿极栅网结构参数和出射电子能量对电子倍增器特性的影响。数值模拟结果表明,倍增器打拿极栅网密度过密或者过疏均会降低电子倍增器的增益,在打拿极栅网间距为0.9 mm时电子倍增器增益最高;较小的二次电子出射能量有利于改善倍增器内电子轨迹的发散并提高倍增器增益。 The characteristics of a box type electron multiplier were mathematically modeled,theoretically analyzed and numerically simulated with software CST for the purpose of design optimization. The impact of the meshsize of dynode grid and emission probability/energy of secondary electron on the electric field distribution, electron trajectory and gain of the electron multiplier was investigated. The simulated results show that the dynode grid meshsize, emission probability and energy of secondary electron all have a major impact on the gain of the electron multiplier. To be specific, as the mesh-size increases, the gain changes in an increase-decrease mode, possibly because of the blocking, focusing/defocusing of the grid mesh, and a mesh-size of 0.9mm results in the highest gain of the multiplier; but as the secondary electron energy decreases, the gain increases, simply because of the improved convergence of the electron trajectories.
出处 《真空科学与技术学报》 CSCD 北大核心 2017年第4期380-385,共6页 Chinese Journal of Vacuum Science and Technology
基金 国家自然科学基金项目(51271140 61275023)
关键词 盒栅式电子倍增器 电子轨迹 电子倍增器增益 CST模拟计算 Box type electron multiplier, Electron trajectory, Electron multiplier gain, CST simulation
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  • 1BRUCE N LAPRADE, RICHARD PRUNIER, REGINALD FARR. The Development of a Robust, Discrete Dynode Electron Mul- tiplier Using Novel Secondary Electron Emissive Materials [ C ]. Pittsburgh Conference, 2 March 2005.
  • 2张倩,胡仁喜,康士廷,等.ANSYSl2.0电磁学有限元分析从入门到精通[M].北京:机械工业出版社,20t0.
  • 3赵国骏,凌宝京,薛坤兴.电子离子光学[M].北京:国防工业出版社,1994.
  • 4Dekker A J.Secondary electron emission[J].Solid State Physics,1958,6:251-315.
  • 5Bruining H.Physics and applications of secondary electron emission[M].Oxford:Pergamon Press,1954.
  • 6Zameroski N D,Prashanth Kumar,Christopher Watts,et al.Secondary electron yield measurements from materials with application to collectors of high-power microwave devices[J].IEEE Trans Plasma Sci,2006,34(3):642-651.
  • 7VaughanJ R.Multipactor[J].IEEETrans Electron Devices,1988,35(7):1172-1180.
  • 8Vaughan J R.New formula for secondary emission yield[J].IEEE Trans Electron Devices,1989,36(9):1963-1967.
  • 9Vaughan J R.Secondary emission formulas[J].IEEE Trans Electron Devices,1993,40(4):830-830.
  • 10Furman M A,Lambertson C-R.The electron-cloud instability in the arcs of the PEP-Ⅱ positron ring[R].Proc Intl Workshop on Multibunch Instabilities in Future Electron and Positron Accelerators (MBI-97),KEK,Tsukuba,Japan,1997.

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