摘要
在IGBT关断的瞬态过程中,变流器杂散电感会使IGBT的集、射极之间产生较高的电压尖峰,从而造成较大的电磁干扰,甚至导致IGBT损坏。若能测量变流器杂散电感,则可在一定程度上预估该电压尖峰,并设计适当的缓冲电路。本文分析了IGBT开通和关断瞬态过程中各阶段的电压和电流,提出了一种优化的基于IGBT开关过程的大功率变流器杂散参数分析方法。通过双脉冲测试方法对西门康功率器件SKM400GAL176D的开关过程进行测试,获取其开通和关断瞬态过程曲线,利用前述方法计算出母排杂散电感。将计算结果与仿真软件提取结果、E4980A阻抗分析仪测试结果进行对比,验证了该方法的准确性与实用性。
In the turn-off transient of IGBT, inverter stray inductance brings voltage spike between CE terminals, resulting in great EMI or even IGBT damage. Accurate measurement for inverter stray inductance is required in order to estimate the voltage spike, and to design proper snubbers. This paper analyzed the switching transient of IGBT, and brings an optimized stray parameter analysis method. Use double-pulse-test method to measure switching curves of Semikron power device SKM400GAL176D, get the turn-on and turn-off transient curves, and calculate the busbar stray inductance with the proposed method. Compare the calculation results with simulation results and measurement results, and the proposed analysis method is verified.
作者
肖文静
唐健
代同振
XIAO Wenjing TANG Jian DAI Tongzhen(Dongfang Electric Corporation Central Academy, Chengdu 610000, China)
出处
《电源学报》
CSCD
2017年第3期38-43,共6页
Journal of Power Supply
