摘要
围绕Ⅲ族氮化物半导体在紫外战术导弹逼近告警系统中的潜在应用前景,设计出一种基于新型Ⅲ族氮化物半导体光电阴极的紫外变像管,确定了影响光电阴极光电发射性能的Al摩尔组分、膜层厚度和P型掺杂水平。利用高分辨率X射线衍射仪和紫外分光光度计,对光电阴极结构和光学日盲特性进行仿真分析和测试。紫外变像管的光谱辐射灵敏度测试结果显示:探测器像管的辐射灵敏度在220~270 nm波段范围内波动较小,在波长266 nm处的辐射灵敏度为39.7 m A/W,光谱响应从波长270 nm之后开始急剧下降,表明其本征具有良好的日盲紫外属性。基于变像管的光谱辐射灵敏度测试结果及信噪比的作用距离模型,采用MODTRAN大气模拟软件包对以此变像管为核心探测器件的导弹逼近告警系统作用距离进行迭代求解。计算结果显示:导弹逼近告警系统的作用距离可达到7.1 km.
A superior ultraviolet image converter tube made of Ⅲ-nitride semiconductor material was developed for missile approach warning （MAW） system. The AI mole fraction, film thickness and P-type doping level parameters which have the effects on the photoelectric emission performance of photocathode were determined. High resolution X ray diffractometer and ultraviolet spectrometer are used to analyze the structural and optical characteristics of photocathode. A relative flat and high quantum efficiency with small fluctuation in the wavelength range from 220 nm to 270 nm is obtained, the radiation sensitivity is 39.7 mA/W at 266 nm wavelength, and the spectral response begins to fall from 270 nm wavelength. According to the spectral radiation sensitivity and detectable distance model based on signal-to-noise ratio, MODTRAN atmosphere transmittance simulation software is used to calculate the operating range of MAW system with image converter tube by means of iteration solution. The calculated result shows that the operating range of MAW system can be up to 7.1 km.
出处
《兵工学报》
EI
CAS
CSCD
北大核心
2017年第5期924-931,共8页
Acta Armamentarii
基金
武器装备预先研究项目(9140C380502150C38002)
关键词
兵器科学与技术
导弹逼近告警
紫外变像管
光电对抗
Ⅲ族氮化物
作用距离
ordnance science and technology
missile approach warning system
UV image converter tube
electro-optical countermeasure
group Ⅲ-nitride
detectable distance
