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立方形貌ITO粉体的水热法制备及光电性能 被引量:3

Hydrothermal Preparation of Cubic ITO Powder and Its Photoelectric Performance
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摘要 以金属In和SnCl_4·5H_2O为原料,采用水热法在120~140℃得到In(OH)_3前驱体,该前驱体在550℃下煅烧得到立方体形貌的氧化铟锡粉体.研究了水热反应温度和反应时间对粉体形貌和晶型的影响.通过热分析仪(TG-DSC)、X射线衍射仪(XRD)、拉曼光谱仪(Raman)、透射电子显微镜(TEM)、四探针电阻仪、X射线光电子能谱仪(XPS)、紫外-可见-近红外分光光度计以及荧光光谱仪对粉体进行了表征,并对水热反应条件为140℃及12 h下制备的c-ITO的光电性能进行了分析.结果表明,随着水热反应温度的升高,ITO粉体形貌由立方体向不规则形貌转变,粉体晶型出现少量的六方相.在水热反应条件为140℃,12 h,铟离子与尿素的摩尔比为1∶5时,得到平均粒径为230 nm的立方体ITO粉体,其电阻率为1.247Ω·cm,光学能带间隙为3.685 e V,与c-In2O3相比其能带间隙更高,室温下260 nm激发波长下粉体出现光致发光,发射峰位于蓝光区域. Cubic indium tin oxide(c-ITO) nanopowders were prepared by hydrothermal method under 120-140℃ to get the precursor and calcination at 550℃, using metal In and SnC14 - 5H2 as the raw materials. The hydrothermal temperature and the reaction time influenced the morphology and the crystal structure of the ITO powders. The photoelectric performance of the c-ITO prepared under 140℃ for 12 h was analyzed. The ITO powders were also eharacterized by means of thermogravimetrie-differential scanning calorimetry (TG- DSC ) analysis, X-ray diffraction( XRD), Raman spectroscopy, transmission electron microscopy( SEM), four point probe resistance measurement, X-ray photoelectron spectroscopy (XPS) and UV-Vis spectrophotometry (UV-Vis). The results show that with the increase of hydrothermal temperature, ITO powders' morphology changed from cubic to irregular shape, and a small amount of hexagonal phase crystal appeared. The average size of the c-ITO prepared after hydrothermal treatment at 140 ℃ for 12 h with n( In3+) :n [ CO (NH2)2 ] = 1 : 5 was 230 nm, and the c-ITO showed a better electrical performance with a low resistivity of 1. 247Ω·cm. Compared with c-In203, c-ITO has a higher optical band gap of 3.685 eV. The PL spectrum of c-ITO excitated with 260 nm wavelength was in blue light region.
出处 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2017年第7期1110-1116,共7页 Chemical Journal of Chinese Universities
基金 北京市自然科学基金(批准号:2142025)资助~~
关键词 立方体形貌氧化铟锡 水热法 光电性能 Cubic indium tin oxide Hydrothermal method Photoelectric property
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