摘要
针对功率器件的抗辐射加固技术,从入射粒子对半导体材料的辐射损伤机理出发,设计了一种-150 V抗辐射P沟道VDMOS器件。该器件采取的抗辐射加固措施有:在颈区的上方形成局部厚场氧化层结构;在N体区进行高剂量离子注入掺杂;在850℃低温条件下生长栅氧化层。通过仿真分析和试验进行了验证,该器件在最劣漏偏置条件下抗总剂量达到3 k Gy,抗单粒子烧毁和单粒子栅穿的LET值为99.1 Me V·cm^2/mg。该器件适用于星用抗辐射DC-DC电源系统。
The radiation hardened VDMOS plays an essential role in DC-DC converters that work in space environments.A radiation hardened-150 V P-channel VDMOS for reducing the effects of TID and SEE was developed from the view of radiation damage mechanism. For improving its performances when working in radiation environment,the partial thick field oxide was formed on the neck zone of VDMOS,and the N-body zone was doped by ion implantation with high dose. Also,the growth quality of gate oxide was optimized. The device was simulated and verified. The results showed that the TID was3 k Gy at the condition of worst drain biasing,and the LET threshold was 99. 1 Me V·cm^2/mg for SEGR and SEB. So it could be widely used in radiation hardened DC-DC converters for space electronic systems.
出处
《微电子学》
CSCD
北大核心
2017年第4期581-585,共5页
Microelectronics
