摘要
氮化镓(GaN)器件由于其卓越的开关特性,被逐渐应用于10 kW及以上系统。器件并联技术能够进一步降低GaN器件的导通损耗,增加系统的功率容量,开始成为工业界关注的重点。由于其极快的开关速度,GaN器件并联的主要挑战在于对其功率回路及驱动回路寄生参数的优化设计。探讨了并联器件特性及寄生参数对开关特性的影响,并详细给出了基于四管并联240 A/650V的半桥模块参考设计,双脉冲实验验证了半桥模块在额定电流下的开关特性。
Industry is adopting gallium nitride（GaN） transistor in 10 kW and higher power systems due to the ultra- fast switching capabilities of GaN.Parallelled GaN transistor is an appealing idea to further increase the power capa- bility and reduce conduction losses of systems.The main challenge for parallel operation is thought to be the diverse parasitics of the power stage and gate driver circuits, because of the ultra-fast switching transition.The effects of char- acteristics and parasitics of paralleled GaN transistor on switching performance is thoroughly discussed.A 240 A/650 V half bridge power stage which consisting of four high-side and four low-side GaN transistor in parallel is given.Dou- ble pulse testing results are presented to confirm the switching performance of the proposed half bridge module.
作者
卢俊诚
陈迪
LU Jun-cheng CHEN Di(GaN Systems Inc., Ottawa K2K 3G8, Canad)
出处
《电力电子技术》
CSCD
北大核心
2017年第9期1-2,共2页
Power Electronics
关键词
氮化镓器件
电力电子系统
大功率
gallium nitride device
power electronics systems
high-power
