期刊文献+

荧光薄膜的制备方法及其在LED中的应用 被引量:11

Preparation and Application in LED of Phosphor Film
下载PDF
导出
摘要 荧光薄膜封装发光二极管(LED)是一种新的封装技术.这种技术通过分离荧光粉与芯片,解决了传统点胶工艺中LED光色不一致、荧光粉沉淀、不利于LED散热等问题,而且提高了荧光粉的热稳定性,极大提升了LED的光色品质.本文综述了荧光薄膜的制备方法及其在LED中的应用实例,对实际研究和应用有一定的作用. Phosphor film packaging technology provides a new encapsulating construction for white LEDs. The phosphor separates from the LED chips in order to solve some issues in traditional dispensing process, such as inconsistent optical and color temperature properties, phosphor precipitate, and hard heat dissipation. Phosphor film packaging technology not only improves the thermal stability of phosphor, but also greatly enhances the optical and color temperature properties of LED. We summarize the preparation method of phosphor film and its application examples in LED, which will contribute to the actual research and application.
出处 《应用技术学报》 2017年第3期207-212,241,共7页 Journal of Technology
基金 国家自然基金青年基金(51302171) 上海市学科能力建设项目(14500503300) 上海市产学研合作项目(沪XY-2013-61)资助
关键词 荧光薄膜 制备方法 发光二极管 应用 phosphor film preparation method light emitting diode (LED) application
  • 相关文献

参考文献6

二级参考文献62

  • 1肖华,吕毅军,徐云鑫,朱丽虹,陈国龙,高玉琳,范贤光,薛睿超.传统白光LED与远程荧光粉白光LED的发光性能比较[J].发光学报,2014,35(1):66-72. 被引量:32
  • 2Fred Schubert E,Jong Kyu Kim.Solid-State Light Sources Getting Smart[J].Science,2005,308:1274-1278.
  • 3Kim J K,Schubert E F.Transcending the Replacement Paradigm of Solid-state Lighting[J].Optics Express,2008,16:21835-21842.
  • 4Shuji Nakamura,Takashi Mukai,Masayuki Senoh.High-brightness InGaN/AlGaN Double-heterostructure Blue-green-light-emitting Diodes[J].J.Appl.Phys.,1994,76(12):8189-8191.
  • 5Schlotter P,Schmidt R,Schneider J.Luminescence Conversion of Blue Light Emitting Diodes[J].Appl.Phys.A,1997,64:417-418.
  • 6Kaufmann U,Kunzer M,Kohler K,et al.Ultraviolet Pumped Tricolor Phosphor Blend White Emitting LEDs[J].Phys.Stat.Sol,2001,188(1):143-146.
  • 7Shen C Y,Li K,Hou Q L,et al.White LED Based on YAG∶Ce,Gd Phosphor and CdSe-ZnS Core/Shell Quantum Dots[J].IEEE PhotonicsTechnology Letters,2010,22(12):884-886.
  • 8Chen H S,Hsu C K,Hong H Y.InGaN-CdSe-ZnSe Quantum Dots White LEDs[J].IEEE Photonics Thchnology Letters,2006,18(1):193-195.
  • 9Regina Mueller-Mach,Gerd O Mueller,Michael R.Kraes,et al.High-Power Phosphor-Converted Light-Emitting Diodes Based onⅢ-Nitrides[J].IEEE J.Sel.Top.Quantum Electron,2002,8(2):339-345.
  • 10Joo Won Kim,Young Jin Kim.The Effects of Substrates and Deposition Parameters on the Growing and Luminescent Properties of Y3Al5O12∶CeThin Films[J].Optical Materials,2006,28:698-702.

共引文献73

同被引文献117

引证文献11

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部