摘要
采用三维数值仿真的方法分别研究SiC MOSFET条形原胞、方形原胞以及六角原胞的电学特性与栅氧化层电场分布;提出SiC MOSFET方形原胞新并联方案,相比传统的方形原胞阵列,新方案可有效降低器件栅氧电场峰值,达到与六角原胞接近的效果。新方案在版图实现上并未增加技术难度,是SiC MOSFET版图设计中一种可行的方案。
The striped cells,square cells and hexagonal cells of SiC MOSFETs are investigated in terms of electrical characteristics and gate oxide electric field distribution by 3D numerical simulations.A new scheme for paralleling of square cells is proposed to effectively decrease the peak value of the gate oxide electric field,and compared with the conventional square cell array,the new scheme achieves a result that is the same as that of the hexagonal cells.The new scheme dose not add any technical difficulty on layout realization and therefore is a feasible scheme for the layout design of SiC MOSFETs.
作者
张凯
罗小蓉
何清源
廖天
杨霏
王嘉铭
方健
ZHANG Kai LUO Xiaorong HE Qingyuan LIAO Tian YANG Fei WANG Jiaming FANG Jian(School of Microelectronics and Solid- State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan Province, China Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China)
出处
《智能电网》
2017年第8期777-780,共4页
Smart Grid
基金
国家重点研发计划(2016YFB0400502)~~
