摘要
采用低温热分解法制备了Ti基IrO_2-Ta_2O_5氧化物涂层电极。通过X射线衍射(XRD),循环伏安曲线,交流阻抗谱,恒流充放电等测试方法分析了Ta含量对IrO_2-Ta_2O_5氧化物涂层组织结构及电容性能的影响。结果表明,Ta_2O_5可抑制IrO_2的晶化程度。随涂层中Ta含量增加,晶化度降低。当Ta含量为60 mol%时,IrO_2-Ta_2O_5电极的结晶度为6.4%,具有较小的电荷转移电阻和最高的比电容(239.2 F/g),比IrO_2电极比电容(54.1 F/g)提高了近4倍。
Ti/IrO_2-Ta_2O_5 electrodes were prepared by a low thermal decomposition method. The influence of Ta contents on the microstructure and capacitive performance of the Ti/IrO_2-Ta_2O_5 electrodes was investigated by XRD,cyclic voltammetry,electrochemical impedance spectroscopy and galvanostatic charge-discharge tests. The results show that Ta_2O_5 can inhibit crystallization of the IrO_2. With increasing Ta content,the crystallization degree decreases. When the content of Ta is 60 mol%,the electrode with a content of 6.4% crystalline structure has a superior capacitive performance of 239.2 g/F,which is considerably higher than that of IrO_2 electrode（54.1 g/F）.
作者
贺冲
陈志杰
林德源
陈云翔
邵艳群
伊昭宇
唐电
He Chong Chen Zhijie Lin Deyuan Chen Yunxiang Shao Yanqun Yi Zhaoyu Tang Dian(Fuzhou University, Fuzhou 350108, China Electric Power Research Institute of State Grid Fujian Electric Power Co. Ltd, Fuzhou 350007, China)
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2017年第9期2589-2593,共5页
Rare Metal Materials and Engineering
基金
国家自然科学基金(11374053)
福建省自然科学基金项目(2015J01190)
